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Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh, MPN: IRLR110PBF

GBP 0.74

1

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh, MPN: IRLR110PBF

GBP 0.63

1

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube, DC Spark Over Voltage: 540 → 720V, Impulse Spark Over Voltage:

GBP 0.76

1

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube, DC Spark Over Voltage: 540 → 720V, Impulse Spark Over Voltage:

GBP 1.26

1

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube, Impulse Spark Over Voltage:

GBP 0.97

1

RS PRO 2.92 W Krypton Replacement Torch Bulb, P13.5s, 5.4 V, 540 mA for General Purpose

GBP 1.17

1

DiodesZetex N-Channel MOSFET, 540 mA, 20 V, 3-Pin X2-DFN0604-3 Diodes Inc DMN2991UFO-7B

GBP 0.04

1

RS PRO Bracket for use with RE 540/1 Motor, RE 540LN Motor, RE 700 Ball Raced Motor

RS PRO Bracket for use with RE 540/1 Motor, RE 540LN Motor, RE 700 Ball Raced Motor, Accessory Type: Motor Bracket

GBP 2.70

1

DiodesZetex N-Channel MOSFET, 540 mA, 20 V, 3-Pin X2-DFN0604-3 Diodes Inc DMN2991UFO-7B

DiodesZetex N-Channel MOSFET, 540 mA, 20 V, 3-Pin X2-DFN0604-3 Diodes Inc DMN2991UFO-7B, Maximum Drain Source Resistance: 0.99 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V

GBP 0.03

1

DiodesZetex N-Channel MOSFET, 540 mA, 20 V, 3-Pin X2-DFN0604-3 Diodes Inc DMN2991UFO-7B

DiodesZetex N-Channel MOSFET, 540 mA, 20 V, 3-Pin X2-DFN0604-3 Diodes Inc DMN2991UFO-7B, Maximum Drain Source Resistance: 0.99 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V

GBP 0.05

1

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 825 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.06

1

Texas Instruments LM5046MH/NOPB, PWM Controller, 100 V, 540 kHz 28-Pin, HTSSOP

Texas Instruments LM5046MH/NOPB, PWM Controller, 100 V, 540 kHz 28-Pin, HTSSOP, Start-up Supply Current: 80mA, Maximum Source Current: 1.5A, Maximum Sink Current: 2A, Maximum Supply Current: 4.6 mA, Zero Power Detection: Yes, Mounting Type: Surface Mount, Dimensions: 9.7 x 4.4 x 0.9mm, Length: 9.7mm, Width: 4.4mm, Maximum Operating Temperature: +125 °C

GBP 4.28

1

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 825 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 360 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1mm

GBP 0.15

1

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 250 mW, Maximum Gate Source Voltage: ±7 V, Forward Diode Voltage: 1.2V, Height: 0.6mm

GBP 0.11

1

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 250 mW, Maximum Gate Source Voltage: ±7 V, Forward Diode Voltage: 1.2V, Height: 0.6mm

GBP 0.15

1

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 250 mW, Maximum Gate Source Voltage: ±7 V, Forward Diode Voltage: 1.2V, Height: 0.6mm

GBP 0.07

1

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 225 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: +8 V, Height: 1.3mm, Length: 3.1mm

GBP 0.13

1

Murata, LQW21P_GR, 0805 (2012M) Multilayer Surface Mount Inductor with a Ferrite Core, 540 nH ±20% Multilayer 1.3A Idc

Murata, LQW21P_GR, 0805 (2012M) Multilayer Surface Mount Inductor with a Ferrite Core, 540 nH ±20% Multilayer 1.3A Idc, Length: 2mm, Depth: 1.25mm, Height: 0.9mm, Dimensions: 2 x 1.25 x 0.9mm, Maximum DC Resistance: 93.8mΩ, Maximum Self Resonant Frequency: 100MHz, Maximum Operating Temperature: +125°C, Minimum Operating Temperature: -55°C, MPN: LQM21PNR54MG0D

GBP 0.09

1

Murata, LQW21P_GR, 0805 (2012M) Multilayer Surface Mount Inductor with a Ferrite Core, 540 nH ±20% Multilayer 1.3A Idc

Murata, LQW21P_GR, 0805 (2012M) Multilayer Surface Mount Inductor with a Ferrite Core, 540 nH ±20% Multilayer 1.3A Idc, Length: 2mm, Depth: 1.25mm, Height: 0.9mm, Dimensions: 2 x 1.25 x 0.9mm, Maximum DC Resistance: 93.8mΩ, Maximum Self Resonant Frequency: 100MHz, Maximum Operating Temperature: +125°C, Minimum Operating Temperature: -55°C, MPN: LQM21PNR54MG0D

GBP 0.26

1

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 225 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.3mm, Length: 3.1mm

GBP 0.18

1

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 900 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 225 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -8 V, +8 V, Height: 1.3mm, Length: 3.1mm

GBP 0.31

1

Vishay Rectifier; 1.0A IF; 1.1V; 600V; 30A Ifms; 5.0uA IR; DO-204AL (DO-41); -55C

Vishay Rectifier; 1.0A IF; 1.1V; 600V; 30A Ifms; 5.0uA IR; DO-204AL (DO-41); -55C, MPN: 1N4005-E3\54

GBP 0.02

1

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Small Signal, Maximum Forward Voltage Drop: 600mV, Peak Reverse Recovery Time: 10ns, Diameter: 1.7mm

GBP 0.04

1

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Small Signal, Maximum Forward Voltage Drop: 600mV, Peak Reverse Recovery Time: 10ns, Diameter: 1.7mm

GBP 0.10

1

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Small Signal, Maximum Forward Voltage Drop: 600mV, Peak Reverse Recovery Time: 10ns, Diameter: 1.7mm

GBP 0.12

1

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Colour

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Merchant

Price (EUR)

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube

EPCOS, EHV 540 → 720V 10kA, Through Hole 2 Electrode Arrester Gas Discharge Tube

RS PRO 2.92 W Krypton Replacement Torch Bulb, P13.5s, 5.4 V, 540 mA for General Purpose

DiodesZetex N-Channel MOSFET, 540 mA, 20 V, 3-Pin X2-DFN0604-3 Diodes Inc DMN2991UFO-7B

RS PRO Bracket for use with RE 540/1 Motor, RE 540LN Motor, RE 700 Ball Raced Motor

DiodesZetex N-Channel MOSFET, 540 mA, 20 V, 3-Pin X2-DFN0604-3 Diodes Inc DMN2991UFO-7B

DiodesZetex N-Channel MOSFET, 540 mA, 20 V, 3-Pin X2-DFN0604-3 Diodes Inc DMN2991UFO-7B

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

Texas Instruments LM5046MH/NOPB, PWM Controller, 100 V, 540 kHz 28-Pin, HTSSOP

Infineon N-Channel MOSFET, 540 mA, 55 V, 3-Pin SOT-23 BSS670S2LH6327XTSA1

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

onsemi Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-563 NTZD3154NT1G

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

Murata, LQW21P_GR, 0805 (2012M) Multilayer Surface Mount Inductor with a Ferrite Core, 540 nH ±20% Multilayer 1.3A Idc

Murata, LQW21P_GR, 0805 (2012M) Multilayer Surface Mount Inductor with a Ferrite Core, 540 nH ±20% Multilayer 1.3A Idc

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

DiodesZetex Dual N-Channel MOSFET, 540 mA, 20 V, 6-Pin SOT-26 Diodes Inc DMN2004DMK-7

Vishay Rectifier; 1.0A IF; 1.1V; 600V; 30A Ifms; 5.0uA IR; DO-204AL (DO-41); -55C

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

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