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Ohmite Resistor, Carbon Comp, 560 Ohm, 0.25 W, 5%, Axial Lead

Ohmite Resistor, Carbon Comp, 560 Ohm, 0.25 W, 5%, Axial Lead, MPN: OD561JE

GBP 0.41

1

Ohmite RESISTOR, CARBON FILM;560; 0.5 W; 5%; 350 V; AXIAL LEADED; 22 AWG

Ohmite RESISTOR, CARBON FILM;560; 0.5 W; 5%; 350 V; AXIAL LEADED; 22 AWG, MPN: OL5615E

GBP 0.02

1

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc, MPN: IHLE5050FHERR56M5A

GBP 2.80

1

Ohmite RESISTOR, CARBON FILM;560; 0.25 W; 5%; 250 V; AXIAL LEADED; 22 AWG

Ohmite RESISTOR, CARBON FILM;560; 0.25 W; 5%; 250 V; AXIAL LEADED; 22 AWG, MPN: OK5615E

GBP 0.02

1

Luna Optoelectronics Photoconductive Cell; 150 Ohms (Typ.) @ 100 ftc; 560 Kilohms (Min.); 515 nm

Luna Optoelectronics Photoconductive Cell; 150 Ohms (Typ.) @ 100 ftc; 560 Kilohms (Min.); 515 nm, MPN: NSL-4910

GBP 3.93

1

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 2 W, Minimum DC Current Gain: 80, Transistor Configuration: Single, Maximum Collector Base Voltage: -560 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 1 MHz, Dimensions: 6.5 x 3.5 x 1.65mm

GBP 0.23

1

Panasonic 560 μH ±10% Leaded Inductor, 680mA Idc, 560mΩ Rdc, ELC10D

Panasonic 560 μH ±10% Leaded Inductor, 680mA Idc, 560mΩ Rdc, ELC10D, Mounting Type: Radial, Diameter: 10mm, Length: 13mm, Height: 15mm, Dimensions: 10 (Dia.) x 15mm, Lead Diameter: 0.8mm, Terminal Type: PC Pin, MPN: ELC10D561E

GBP 0.32

1

Panasonic 560 μH ±10% Leaded Inductor, 680mA Idc, 560mΩ Rdc, ELC10D

Panasonic 560 μH ±10% Leaded Inductor, 680mA Idc, 560mΩ Rdc, ELC10D, Mounting Type: Radial, Diameter: 13mm, Depth: 10mm, Height: 15mm, Dimensions: 13 (Dia.) x 15mm, Lead Diameter: 0.8mm, Terminal Type: Through Hole, MPN: ELC10D561E

GBP 0.81

1

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -560 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 1 MHz, Dimensions: 6.5 x 3.5 x 1.65mm, Maximum Base Emitter Saturation Voltage: -1 V, Maximum Collector Emitter Saturation Voltage: -0.5 V

GBP 0.15

1

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Maximum Power Dissipation: 2 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -560 V, Maximum Emitter Base Voltage: -7 V, Maximum Operating Frequency: 1 MHz, Dimensions: 6.5 x 3.5 x 1.65mm, Maximum Base Emitter Saturation Voltage: -1 V, Maximum Collector Emitter Saturation Voltage: -0.5 V

GBP 0.23

1

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc, Length: 13.97mm, Automotive Standard: AEC-Q200, Depth: 6.55mm, Shielded: Yes, MPN: IHLE5050FHERR56M5A

GBP 3.03

1

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc, Length: 13.97mm, Automotive Standard: AEC-Q200, Depth: 6.55mm, Shielded: Yes, MPN: IHLE5050FHERR56M5A

GBP 1.93

1

Lumex LED; White; 2300 mcd (Typ.)Axial; T-5 mm; 100 mA (Peak); 3.6 V (Typ.); 560 nm

Lumex LED; White; 2300 mcd (Typ.)Axial; T-5 mm; 100 mA (Peak); 3.6 V (Typ.); 560 nm, MPN: SSL-LX5093XUWC

GBP 1.31

1

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC, Line Regulation: 0.03 %/V, Mounting Type: Surface Mount, Switching Regulator: Yes, Dimensions: 5 x 4 x 1.5mm, Maximum Input Voltage: 30 V, Maximum Operating Temperature: +125 °C, Minimum Input Voltage: 2.7 V

GBP 1.46

1

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC, Line Regulation: 0.03 %/V, Mounting Type: Surface Mount, Switching Regulator: Yes, Dimensions: 5 x 4 x 1.5mm, Maximum Input Voltage: 30 V, Maximum Operating Temperature: +125 °C, Minimum Input Voltage: 2.7 V

GBP 1.72

1

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC, Line Regulation: 0.03 %/V, Mounting Type: Surface Mount, Switching Regulator: Yes, Dimensions: 5 x 4 x 1.5mm, Maximum Input Voltage: 30 V, Maximum Operating Temperature: +125 °C, Minimum Input Voltage: 2.7 V

GBP 0.79

1

EPCOS SIMID, 2220 (5650M) Shielded Wire-wound SMD Inductor with a Ferrite Core, 560 μH ±10% 220mA Idc Q:20

EPCOS SIMID, 2220 (5650M) Shielded Wire-wound SMD Inductor with a Ferrite Core, 560 μH ±10% 220mA Idc Q:20, MPN: B82442T1564K000

GBP 1.29

1

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 690 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.04

1

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT3G

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT3G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 830 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.01mm, Length: 3.04mm

GBP 0.03

1

KEMET 330nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole

KEMET 330nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole, Lead Pitch: 15mm, Series: R46, Dielectric: PP, Suppression Class: X2, Length: 18mm, Depth: 9mm, Height: 12.5mm, Dimensions: 18 x 9 x 12.5mm, Lead Diameter: 0.6mm, Tolerance (Minus): -20%, Tolerance (Plus): +20%, MPN: R46KI333000N1M

GBP 0.25

1

KEMET 220nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole

KEMET 220nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole, Lead Pitch: 15mm, Series: R46, Dielectric: PP, Suppression Class: X2, Length: 18mm, Depth: 7.5mm, Height: 13.5mm, Dimensions: 18 x 7.5 x 13.5mm, Lead Diameter: 0.6mm, Tolerance (Minus): -20%, Tolerance (Plus): +20%, MPN: R46KI322000M2M

GBP 0.22

1

KEMET 470nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole

KEMET 470nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole, Lead Pitch: 15mm, Series: R46, Dielectric: PP, Suppression Class: X2, Length: 18mm, Depth: 10mm, Height: 16mm, Dimensions: 18 x 10 x 16mm, Lead Diameter: 0.8mm, Tolerance (Minus): -20%, Tolerance (Plus): +20%, MPN: R46KI347000N0M

GBP 0.35

1

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3ATMA1

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm

GBP 1.53

1

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm

GBP 0.63

1

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3ATMA1

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3ATMA1, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.9V, Minimum Gate Threshold Voltage: 2.1V, Maximum Power Dissipation: 50 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.41mm

GBP 1.44

1

Brand

Colour

Gender

Merchant

Price (EUR)

Ohmite Resistor, Carbon Comp, 560 Ohm, 0.25 W, 5%, Axial Lead

Ohmite RESISTOR, CARBON FILM;560; 0.5 W; 5%; 350 V; AXIAL LEADED; 22 AWG

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc

Ohmite RESISTOR, CARBON FILM;560; 0.25 W; 5%; 250 V; AXIAL LEADED; 22 AWG

Luna Optoelectronics Photoconductive Cell; 150 Ohms (Typ.) @ 100 ftc; 560 Kilohms (Min.); 515 nm

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223

Panasonic 560 μH ±10% Leaded Inductor, 680mA Idc, 560mΩ Rdc, ELC10D

Panasonic 560 μH ±10% Leaded Inductor, 680mA Idc, 560mΩ Rdc, ELC10D

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223

Taiwan Semiconductor TSA1765CW RPG PNP Transistor, 150 mA, 560 V, 3 + Tab-Pin SOT-223

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc

Vishay, IHLE5050, 5050 Shielded Wire-wound SMD Inductor 560 nH 20% Shielded 50A Idc

Lumex LED; White; 2300 mcd (Typ.)Axial; T-5 mm; 100 mA (Peak); 3.6 V (Typ.); 560 nm

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC

onsemi CS5173GDR8G, Boost Regulator, Step Up 1.5A, 560 kHz 8-Pin, SOIC

EPCOS SIMID, 2220 (5650M) Shielded Wire-wound SMD Inductor with a Ferrite Core, 560 μH ±10% 220mA Idc Q:20

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT1G

onsemi N-Channel MOSFET, 560 mA, 30 V, 3-Pin SOT-23 NTR4003NT3G

KEMET 330nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole

KEMET 220nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole

KEMET 470nF Polyester Capacitor PET 275 V ac, 560 V dc ±20%, Through Hole

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3ATMA1

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3

Infineon N-Channel MOSFET, 4.5 A, 560 V, 3-Pin DPAK SPD04N50C3ATMA1

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