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onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -160 V, Maximum Emitter Base Voltage: -6 V, Maximum Operating Frequency: 1 MHz, Dimensions: 5.1 x 4.1 x 8.2mm

GBP 0.15

1

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.3 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.97

1

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.3 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.49

1

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.3 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 1.14

1

onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -160 V, Maximum Emitter Base Voltage: -6 V, Maximum Operating Frequency: 1 MHz, Dimensions: 5.1 x 4.1 x 8.2mm, Maximum Collector Emitter Saturation Voltage: -1.5 V, Maximum Operating Temperature: +150 °C

GBP 0.09

1

onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -160 V, Maximum Emitter Base Voltage: -6 V, Maximum Operating Frequency: 1 MHz, Dimensions: 5.1 x 4.1 x 8.2mm, Maximum Collector Emitter Saturation Voltage: -1.5 V, Maximum Operating Temperature: +150 °C

GBP 0.25

1

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Dimensions: 5.1 x 4.1 x 8.2mm, Maximum Collector Emitter Saturation Voltage: 1.5 V

GBP 0.10

1

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Dimensions: 5.1 x 4.1 x 8.2mm, Maximum Collector Emitter Saturation Voltage: 1.5 V

GBP 0.31

1

onsemi KSC2690AYS NPN Transistor, 1.2 A, 160 V, 3-Pin TO-126

onsemi KSC2690AYS NPN Transistor, 1.2 A, 160 V, 3-Pin TO-126, Mounting Type: Through Hole, Maximum Power Dissipation: 20 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 8 x 3.25 x 11mm, Length: 8mm

GBP 0.29

1

onsemi SMMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

onsemi SMMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Automotive Standard: AEC-Q101, Dimensions: 3.04 x 1.4 x 1.01mm

GBP 0.11

1

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 4.9 x 3.9 x 8mm

GBP 0.18

1

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92, Maximum Continuous Collector Current: 1 A, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Emitter Base Voltage: 6 V, Dimensions: 5.1 x 4.1 x 8.2mm

GBP 0.18

1

onsemi MMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

onsemi MMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 180 V, Maximum Emitter Base Voltage: 6 V, Dimensions: 0.94 x 2.9 x 1.3mm, Height: 0.94mm, Length: 2.9mm

GBP 0.10

1

onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 454 W, Transistor Configuration: Single, Length: 16.25mm, Width: 5.3mm, Height: 21.34mm, Dimensions: 16.25 x 5.3 x 21.34mm, Gate Capacitance: 4912pF, MPN: NGTB40N120S3WG

GBP 4.30

1

onsemi NGTB40N120FL3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB40N120FL3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 16.25mm, Width: 5.3mm, Height: 21.4mm, Dimensions: 16.25 x 5.3 x 21.4mm, Gate Capacitance: 4912pF

GBP 4.12

1

onsemi NGTB40N120L3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB40N120L3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 16.25mm, Width: 5.3mm, Height: 21.34mm, Dimensions: 16.25 x 5.3 x 21.34mm, Gate Capacitance: 4912pF

GBP 4.66

1

onsemi MMBT5551LT3G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

onsemi MMBT5551LT3G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23, Mounting Type: Surface Mount, Maximum Power Dissipation: 225 mW, Minimum DC Current Gain: 30, Transistor Configuration: Single, Maximum Collector Base Voltage: 180 V dc, Maximum Emitter Base Voltage: 6 V, Dimensions: 3.04 x 2.64 x 1.11mm, Length: 3.04mm

GBP 0.07

1

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 1.46

1

onsemi 2N5551BU NPN Transistor, 600 mA, 160 V, 3-Pin TO-92

onsemi 2N5551BU NPN Transistor, 600 mA, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 625 mW, Minimum DC Current Gain: 80, Transistor Configuration: Single, Maximum Collector Base Voltage: 180 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 5.2 x 4.19 x 5.33mm

GBP 0.08

1

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 4.9 x 3.9 x 8mm, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Operating Temperature: +150 °C

GBP 0.10

1

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 900 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Dimensions: 4.9 x 3.9 x 8mm, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Operating Temperature: +150 °C

GBP 0.31

1

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 1.43

1

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 120 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 2.08

1

onsemi 2SC4614T-AN NPN Transistor, 1.5 A, 160 V, 3-Pin NMP

onsemi 2SC4614T-AN NPN Transistor, 1.5 A, 160 V, 3-Pin NMP, Mounting Type: Through Hole, Maximum Power Dissipation: 1 W, Minimum DC Current Gain: 140, Transistor Configuration: Single, Maximum Collector Base Voltage: 180 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 150 MHz, Dimensions: 6.9 x 2.5 x 4.5mm

GBP 0.14

1

onsemi NGTB40N120L3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB40N120L3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 454 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16.25 x 5.3 x 21.34mm, Gate Capacitance: 4912pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.39

1

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onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870

onsemi N-Channel MOSFET, 160 A, 30 V, 3-Pin DPAK FDD8870

onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSA1013YTA PNP Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92

onsemi KSC2690AYS NPN Transistor, 1.2 A, 160 V, 3-Pin TO-126

onsemi SMMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSC2383OTA NPN Digital Transistor, 160 V, 3-Pin TO-92

onsemi MMBT5551LT1G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

onsemi NGTB40N120S3W IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB40N120FL3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB40N120L3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

onsemi MMBT5551LT3G NPN Transistor, 600 mA, 160 V, 3-Pin SOT-23

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G

onsemi 2N5551BU NPN Transistor, 600 mA, 160 V, 3-Pin TO-92

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi KSC2383YTA NPN Transistor, 1 A, 160 V, 3-Pin TO-92

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G

onsemi N-Channel MOSFET, 160 A, 40 V, 3-Pin DPAK NTD5C434NT4G

onsemi 2SC4614T-AN NPN Transistor, 1.5 A, 160 V, 3-Pin NMP

onsemi NGTB40N120L3WG IGBT, 160 A 1200 V, 3-Pin TO-247, Through Hole

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