onsemi P-Channel MOSFET, 8 A, 20 V, 8-Pin SOIC FDS6375
onsemi P-Channel MOSFET, 8 A, 20 V, 8-Pin SOIC FDS6375, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Number of Elements per Chip: 1, Height: 1.5mm