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onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Length: 6.73mm, Width: 6.22mm, Height: 2.38mm, Dimensions: 2.38 x 6.73 x 6.22mm

GBP 0.80

1

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Length: 6.73mm, Width: 6.22mm, Height: 2.38mm, Dimensions: 2.38 x 6.73 x 6.22mm

GBP 0.40

1

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Length: 6.73mm, Width: 6.22mm, Height: 2.38mm, Dimensions: 2.38 x 6.73 x 6.22mm

GBP 0.73

1

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G, Mounting Type: Surface Mount, Maximum Continuous Forward Current: 6A, Peak Reverse Repetitive Voltage: 200V, Rectifier Type: Switching, Diode Type: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Peak Reverse Recovery Time: 35ns, Peak Non-Repetitive Forward Surge Current: 50A

GBP 0.24

1

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG, Mounting Type: Surface Mount, Maximum Continuous Forward Current: 6A, Peak Reverse Repetitive Voltage: 200V, Rectifier Type: Switching, Diode Type: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Peak Reverse Recovery Time: 35ns, Peak Non-Repetitive Forward Surge Current: 50A

GBP 0.69

1

onsemi Dual Switching Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G

onsemi Dual Switching Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Length: 6.73mm, Width: 6.22mm, Height: 2.38mm, Dimensions: 2.38 x 6.73 x 6.22mm

GBP 0.21

1

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±14V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 0.36

1

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±14V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 0.36

1

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 134 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.90

1

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 134 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.99

1

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 134 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 2.22

1

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±10V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 1.30

1

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±10V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 0.53

1

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±10V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 0.60

1

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±10V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 6.73mm, Width: 6.22mm, Height: 2.39mm, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C

GBP 1.03

1

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±10V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 6.73mm, Width: 6.22mm, Height: 2.39mm, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C

GBP 1.19

1

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±10V, Maximum Power Dissipation: 150 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.22

1

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount, Maximum Gate Emitter Voltage: ±14V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Length: 6.73mm, Width: 6.22mm, Height: 2.39mm, Dimensions: 6.73 x 6.22 x 2.39mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 0.90

1

onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A

onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A, Mounting Type: Surface Mount, Package Type: TO-252, Diode Configuration: Single, Peak Non-Repetitive Forward Surge Current: 530A

GBP 3.68

1

onsemi 650V 18A, SiC Schottky Diode, 3-Pin DPAK FFSD1065A

onsemi 650V 18A, SiC Schottky Diode, 3-Pin DPAK FFSD1065A, Mounting Type: Surface Mount, Package Type: TO-252, Diode Configuration: Single, Peak Non-Repetitive Forward Surge Current: 760A

GBP 2.33

1

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG, Mounting Type: Surface Mount, Package Type: DPAK (TO-252), Diode Configuration: Single, Maximum Forward Voltage Drop: 550mV, MPN: MBRD1035CTLT4G

GBP 0.56

1

onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A

onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A, Mounting Type: Surface Mount, Package Type: TO-252, Diode Configuration: Single, Peak Non-Repetitive Forward Surge Current: 530A

GBP 2.23

1

onsemi 650V 18A, SiC Schottky Diode, 3-Pin DPAK FFSD1065A

onsemi 650V 18A, SiC Schottky Diode, 3-Pin DPAK FFSD1065A, Mounting Type: Surface Mount, Package Type: TO-252, Diode Configuration: Single, Peak Non-Repetitive Forward Surge Current: 760A

GBP 4.03

1

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG, Mounting Type: Surface Mount, Package Type: DPAK (TO-252), Diode Configuration: Single, Maximum Forward Voltage Drop: 550mV, MPN: MBRD1035CTLT4G

GBP 0.42

1

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG, Mounting Type: Surface Mount, Package Type: DPAK (TO-252), Diode Configuration: Single, Maximum Forward Voltage Drop: 550mV, MPN: MBRD1035CTLT4G

GBP 0.34

1

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onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G

onsemi Dual Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTG

onsemi Dual Switching Diode, Common Cathode, 3-Pin DPAK (TO-252) MURD620CTT4G

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG

onsemi N-Channel MOSFET, 252 A, 40 V, 4-Pin LFPAK NVMYS1D3N04CTWG

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi FGD3040G2_F085 IGBT, 41 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V3040D3ST IGBT, 21 A 300 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi ISL9V2040D3ST IGBT, 10 A 450 V, 3-Pin DPAK (TO-252), Surface Mount

onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A

onsemi 650V 18A, SiC Schottky Diode, 3-Pin DPAK FFSD1065A

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG

onsemi 1200V 22.5A, SiC Schottky Diode, 3-Pin DPAK FFSD08120A

onsemi 650V 18A, SiC Schottky Diode, 3-Pin DPAK FFSD1065A

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG

onsemi 35V 10A, Schottky Diode, 3-Pin DPAK MBRD1035CTLG

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