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onsemi N-Channel MOSFET Transistor, 110 A, 80 V, 8-Pin DFN5 NVMFS6H824NLT1G

GBP 1.05

1

onsemi N-Channel MOSFET Transistor, 110 A, 80 V, 8-Pin DFN5 NVMFS6H824NLT1G

onsemi N-Channel MOSFET Transistor, 110 A, 80 V, 8-Pin DFN5 NVMFS6H824NLT1G, Maximum Drain Source Resistance: 0.004 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V

GBP 1.34

1

onsemi N-Channel MOSFET Transistor, 110 A, 80 V, 8-Pin DFN5 NVMFS6H824NLT1G

onsemi N-Channel MOSFET Transistor, 110 A, 80 V, 8-Pin DFN5 NVMFS6H824NLT1G, Maximum Drain Source Resistance: 0.004 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V

GBP 0.86

1

onsemi NCP1014AP100G, PWM Controller, 10 V, 110 kHz 7-Pin, PDIP

onsemi NCP1014AP100G, PWM Controller, 10 V, 110 kHz 7-Pin, PDIP, Control Method: Current, Mounting Type: Through Hole, Rise Time: 20ns, Topology: Flyback, Dimensions: 10.16 x 6.6 x 3.44mm, Maximum Duty Cycle: 72%, Length: 10.16mm, PWM Controller Type: Current Mode, Width: 6.6mm

GBP 0.92

1

onsemi NCP1014AP100G, PWM Controller, 10 V, 110 kHz 7-Pin, PDIP

onsemi NCP1014AP100G, PWM Controller, 10 V, 110 kHz 7-Pin, PDIP, Control Method: Current, Mounting Type: Through Hole, Rise Time: 20ns, Topology: Flyback, Dimensions: 10.16 x 6.6 x 3.44mm, Maximum Duty Cycle: 72%, Length: 10.16mm, PWM Controller Type: Current Mode, Width: 6.6mm

GBP 1.06

1

onsemi NCP1012AP100G, PWM Controller, 7.5 V, 110 kHz 7-Pin, PDIP

onsemi NCP1012AP100G, PWM Controller, 7.5 V, 110 kHz 7-Pin, PDIP, Control Method: Current, Fall Time: 10ns, Mounting Type: Through Hole, Rise Time: 20ns, Topology: Flyback, Dimensions: 10.16 x 6.6 x 3.44mm, Maximum Duty Cycle: 72%, Length: 10.16mm, PWM Controller Type: Current Mode, Width: 6.6mm

GBP 0.86

1

onsemi NCP1012AP100G, PWM Controller, 7.5 V, 110 kHz 7-Pin, PDIP

onsemi NCP1012AP100G, PWM Controller, 7.5 V, 110 kHz 7-Pin, PDIP, Control Method: Current, Topology: Flyback, Rise Time: 20ns, Fall Time: 10ns, Maximum Duty Cycle: 72%, Mounting Type: Through Hole, On/Off Pin: Yes, Dimensions: 10.16 x 6.6 x 3.44mm, Length: 10.16mm, Maximum Operating Temperature: +150 °C

GBP 0.86

1

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 176 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.25V

GBP 3.04

1

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 176 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.25V

GBP 3.58

1

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 176 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.25V

GBP 1.89

1

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223, Output Current: 550 mA, Fall Time: 10ns, Mounting Type: Surface Mount, Rise Time: 20ns, Topology: Flyback, Dimensions: 6.7 x 3.7 x 1.65mm, Maximum Duty Cycle: 72%, Length: 6.7mm, PWM Controller Type: Current Mode, Width: 3.7mm

GBP 0.37

1

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC, Maximum Output Current: 100µA, Mounting Type: Surface Mount, Dimensions: 5 x 4 x 1.5mm, Maximum Input Voltage: 40 V dc, Maximum Operating Temperature: +150 °C, Maximum Output Voltage: 2.5 V, Minimum Input Voltage: 3.2 V

GBP 0.68

1

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223, Control Method: Current, Topology: Flyback, Rise Time: 20ns, Fall Time: 10ns, Maximum Duty Cycle: 72%, Mounting Type: Surface Mount, Output Current: 550 mA, On/Off Pin: Yes, Dimensions: 6.7 x 3.7 x 1.65mm, Length: 6.7mm

GBP 0.57

1

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC, Maximum Output Current: 100µA, Mounting Type: Surface Mount, Dimensions: 5 x 4 x 1.5mm, Maximum Input Voltage: 40 V dc, Maximum Operating Temperature: +150 °C, Maximum Output Voltage: 2.5 V, Minimum Input Voltage: 3.2 V

GBP 1.46

1

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC, Maximum Output Current: 100µA, Mounting Type: Surface Mount, Dimensions: 5 x 4 x 1.5mm, Maximum Input Voltage: 40 V dc, Maximum Operating Temperature: +150 °C, Maximum Output Voltage: 2.5 V, Minimum Input Voltage: 3.2 V

GBP 1.23

1

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223, Output Current: 550 mA, Fall Time: 10ns, Mounting Type: Surface Mount, Rise Time: 20ns, Topology: Flyback, Dimensions: 6.7 x 3.7 x 1.65mm, Maximum Duty Cycle: 72%, Length: 6.7mm, PWM Controller Type: Current Mode, Width: 3.7mm

GBP 0.83

1

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 96 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, Length: 5.1mm

GBP 0.25

1

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 96 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, Length: 5.1mm

GBP 0.25

1

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 96 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.1mm, Length: 5.1mm

GBP 0.25

1

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.14

1

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.79

1

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 66 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.18

1

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.8 V, Maximum Collector Base Voltage: 140 V, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Collector Cut-off Current: 10nA, Dimensions: 6.5 x 3.5 x 1.6mm

GBP 0.12

1

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.8 V, Maximum Collector Base Voltage: 140 V, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Collector Cut-off Current: 10nA, Dimensions: 6.5 x 3.5 x 1.6mm

GBP 0.07

1

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223, Mounting Type: Surface Mount, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.8 V, Maximum Collector Base Voltage: 140 V, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Collector Cut-off Current: 10nA, Dimensions: 6.5 x 3.5 x 1.6mm

GBP 0.07

1

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onsemi N-Channel MOSFET Transistor, 110 A, 80 V, 8-Pin DFN5 NVMFS6H824NLT1G

onsemi N-Channel MOSFET Transistor, 110 A, 80 V, 8-Pin DFN5 NVMFS6H824NLT1G

onsemi N-Channel MOSFET Transistor, 110 A, 80 V, 8-Pin DFN5 NVMFS6H824NLT1G

onsemi NCP1014AP100G, PWM Controller, 10 V, 110 kHz 7-Pin, PDIP

onsemi NCP1014AP100G, PWM Controller, 10 V, 110 kHz 7-Pin, PDIP

onsemi NCP1012AP100G, PWM Controller, 7.5 V, 110 kHz 7-Pin, PDIP

onsemi NCP1012AP100G, PWM Controller, 7.5 V, 110 kHz 7-Pin, PDIP

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7

onsemi N-Channel MOSFET, 110 A, 60 V, 3-Pin D2PAK NTBS2D7N06M7

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC

onsemi NCV887001D1R2G, Boost Controller, Boost Controller 100μA Adjustable, 110 kHz 8-Pin, SOIC

onsemi NCP1012ST100T3G, PWM Controller, 10 V, 110 kHz 3 + Tab-Pin, SOT-223

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G

onsemi N-Channel MOSFET, 110 A, 40 V, 8-Pin SO-8FL NTMFS5832NLT1G

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G

onsemi N-Channel MOSFET, 110 A, 40 V, 3 + Tab-Pin DPAK NTD5C446NT4G

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223

onsemi NZT605 NPN Darlington Pair, 1.5 A 110 V HFE:200, 3 + Tab-Pin SOT-223

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