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onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 660 W, Transistor Configuration: Single

GBP 7.07

1

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single

GBP 8.21

1

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 714 W, Transistor Configuration: Single

GBP 6.80

1

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 660 W, Transistor Configuration: Single

GBP 6.09

1

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Transistor Configuration: Single

GBP 4.90

1

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Transistor Configuration: Single

GBP 5.68

1

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole, Maximum Power Dissipation: 453 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.14

1

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole, Maximum Power Dissipation: 453 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.28

1

onsemi AFGHL50T65SQDCOS NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

onsemi AFGHL50T65SQDCOS NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Power Dissipation: 238 W, Transistor Configuration: Single, Maximum Operating Frequency: 1 MHz, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C

GBP 7.67

1

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 2 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.93

1

onsemi MJ15003G NPN Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi MJ15003G NPN Transistor, 20 A, 140 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 2 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 6.40

1

onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 455 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.8mm, Width: 5.2mm, Height: 22.74mm, Dimensions: 15.8 x 5.2 x 22.74mm

GBP 5.41

1

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 555 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.92

1

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 298 W, Transistor Configuration: Single, Dimensions: 15.8 x 5 x 20.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.95

1

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 555 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.71

1

onsemi FGY75N60SMD IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole

onsemi FGY75N60SMD IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 750 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.32mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 6.18

1

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 600 W, Transistor Configuration: Single, Dimensions: 15.6 x 4.7 x 20.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.83

1

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 454 W, Transistor Configuration: Single, Length: 15.8mm, Width: 5.2mm, Height: 22.74mm, Dimensions: 15.8 x 5.2 x 22.74mm, Gate Capacitance: 5000pF

GBP 5.76

1

onsemi FGH60N60SFDTU IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

onsemi FGH60N60SFDTU IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 378 W, Transistor Configuration: Single, Dimensions: 15.6 x 4.7 x 20.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.52

1

onsemi FGY75N60SMD IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole

onsemi FGY75N60SMD IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 750 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.32mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 5.34

1

onsemi FGH40N60SMD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

onsemi FGH40N60SMD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 349 W, Transistor Configuration: Single, Dimensions: 15.6 x 4.7 x 20.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.77

1

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL, Mounting Type: Through Hole, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 35 MHz, Dimensions: 26.4 x 20.3 x 5.3mm, Height: 26.4mm

GBP 4.95

1

onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole

onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 500 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.44

1

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL, Mounting Type: Through Hole, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 35 MHz, Dimensions: 26.4 x 20.3 x 5.3mm, Height: 26.4mm

GBP 4.99

1

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 268 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 4.41

1

Brand

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Merchant

Price (EUR)

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY120T65SPD IGBT, 120 A 650 V, 3-Pin TO-247

onsemi AFGY100T65SPD IGBT, 100 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQDC IGBT, 75 A 650 V, 3-Pin TO-247

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi AFGHL50T65SQDCOS NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

onsemi MJ15004G PNP Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi MJ15003G NPN Transistor, 20 A, 140 V, 2-Pin TO-204AA

onsemi FGH75T65SHDTL4, P-Channel IGBT, 150 A 650 V, 4-Pin TO-247, Through Hole

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGA60N60UFDTU IGBT, 120 A 600 V, 3-Pin TO-3P, Through Hole

onsemi FGH40T120SMD IGBT, 80 A 1200 V, 3-Pin TO-247, Through Hole

onsemi FGY75N60SMD IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole

onsemi FGH60N60SMD IGBT, 120 A 600 V, 3-Pin TO-247AB, Through Hole

onsemi FGH40T120SQDNL4, P-Channel IGBT, 160 A 1200 V, 4-Pin TO-247, Through Hole

onsemi FGH60N60SFDTU IGBT, 120 A 600 V, 3-Pin TO-247, Through Hole

onsemi FGY75N60SMD IGBT, 150 A 600 V, 3-Pin TO-247, Through Hole

onsemi FGH40N60SMD IGBT, 80 A 600 V, 3-Pin TO-247, Through Hole

onsemi MJL4281AG NPN Transistor, 15 A, 350 V, 3-Pin TO-3PBL

onsemi FGH30S130P IGBT, 60 A 1300 V, 3-Pin TO-247, Through Hole

onsemi MJL4302AG PNP Transistor, 15 A, 350 V, 3-Pin TO-3BPL

onsemi FGHL50T65SQ IGBT, 100 A 650 V, 3-Pin TO-247, Through Hole

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