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onsemi FAN9673Q, Power Factor Controller, 40 kHz, 30 V 32-Pin, LQFP

onsemi FAN9673Q, Power Factor Controller, 40 kHz, 30 V 32-Pin, LQFP, Start-up Supply Current: 80µA, Maximum Source Current: 50µA, Maximum Sink Current: -35 (Current) μA, -40 (Voltage) μA, Maximum Supply Current: 7 mA, Zero Power Detection: Yes, Mounting Type: Surface Mount, Dimensions: 9 x 7 x 1.45mm, Length: 9mm, Maximum Operating Temperature: +105 °C, Minimum Operating Temperature: -40 °C

GBP 4.41

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

GBP 4.52

1

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA, Maximum DC Collector Current: 20 (Continuous) A, 40 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.06

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 4.41

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 5.16

1

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V dc, Maximum Operating Frequency: 1 MHz, Dimensions: 39.37 x 26.67 x 8.51mm

GBP 5.68

1

onsemi FAN9673Q, Power Factor Controller, 40 kHz, 30 V 32-Pin, LQFP

onsemi FAN9673Q, Power Factor Controller, 40 kHz, 30 V 32-Pin, LQFP, Start-up Supply Current: 80µA, Maximum Source Current: 50µA, Maximum Sink Current: -35 μA, -40µA, Maximum Supply Current: 7 mA, Zero Power Detection: Yes, Mounting Type: Surface Mount, Dimensions: 9 x 7 x 1.45mm, Length: 9mm, Maximum Operating Temperature: +105 °C

GBP 4.41

1

onsemi N-Channel MOSFET, 553.8 A, 40 V, 8-Pin DFNW NVMTS0D4N04CLTXG

onsemi N-Channel MOSFET, 553.8 A, 40 V, 8-Pin DFNW NVMTS0D4N04CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 640 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 244 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 4.91

1

onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW NVMTS0D7N04CLTXG

onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW NVMTS0D7N04CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 630 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 205 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 4.75

1

onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW NVMTS0D7N04CLTXG

onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW NVMTS0D7N04CLTXG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 630 μΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 205 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 5.57

1

onsemi 2N3771G NPN Transistor, 30 A, 40 V, 2-Pin TO-204AA

onsemi 2N3771G NPN Transistor, 30 A, 40 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 50 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 50 kHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 5.89

1

onsemi 2N3771G NPN Transistor, 30 A, 40 V, 2-Pin TO-204AA

onsemi 2N3771G NPN Transistor, 30 A, 40 V, 2-Pin TO-204AA, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 50 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 50 kHz, Dimensions: 39.37 x 26.67 x 8.51mm, Maximum Collector Emitter Saturation Voltage: 4 V, Maximum Operating Temperature: +200 °C

GBP 4.41

1

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 82 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 48 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 5.01

1

onsemi ON Semiconductor FND42060F2 Intelligent Power Module, 600 V 20 A, 40 (Peak) A 26-Pin, SPMAA

onsemi ON Semiconductor FND42060F2 Intelligent Power Module, 600 V 20 A, 40 (Peak) A 26-Pin, SPMAA, Motor Type: BLDC Motor, PMSM Motor, Configuration: 3 Phase, Maximum Output Current: 1mA, Maximum Supply Voltage: 20 V, Mounting Type: Through Hole, Typical Switching Frequency: 5kHz, Maximum Isolation Rating: 4000Vrms, Series: Motion SPM® 45, Dimensions: 39.5 x 23.5 x 4.8mm

GBP 7.90

1

onsemi ON Semiconductor FND42060F2 Intelligent Power Module, 600 V 20 A, 40 (Peak) A 26-Pin, SPMAA

onsemi ON Semiconductor FND42060F2 Intelligent Power Module, 600 V 20 A, 40 (Peak) A 26-Pin, SPMAA, Motor Type: BLDC Motor, PMSM Motor, Configuration: 3 Phase, Maximum Output Current: 1mA, Maximum Supply Voltage: 20 V, Mounting Type: Through Hole, Typical Switching Frequency: 5kHz, Maximum Isolation Rating: 4000Vrms, Series: Motion SPM® 45, Dimensions: 39.5 x 23.5 x 4.8mm

GBP 7.77

1

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 592 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 8.50

1

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 592 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 7.69

1

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 6.54

1

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 6.34

1

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 7.60

1

onsemi N-Channel MOSFET, 76 A, 650 V, 3-Pin TO-247 FCH041N65F

onsemi N-Channel MOSFET, 76 A, 650 V, 3-Pin TO-247 FCH041N65F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm, MPN: FCH041N65F_F155

GBP 6.18

1

onsemi MC100EL16DG Differential Line Receiver, 8-Pin SOIC

onsemi MC100EL16DG Differential Line Receiver, 8-Pin SOIC, Power Supply Type: Dual, Typical Single Supply Voltage: 5 V, Typical Dual Supply Voltage: ±4.2 → ±5.7V, Maximum Input Resistance: 75kΩ, Maximum Voltage Gain: 40, Mounting Type: Surface Mount, Maximum Supply Current: 22 mA, Dimensions: 5 x 4 x 1.5mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C

GBP 4.89

1

onsemi MC100LVEL16D Differential Line Receiver, 8-Pin SOIC

onsemi MC100LVEL16D Differential Line Receiver, 8-Pin SOIC, Power Supply Type: Dual, Typical Single Supply Voltage: 3.3 V, Typical Dual Supply Voltage: ±3 → ±3.8V, Maximum Input Resistance: 75kΩ, Maximum Voltage Gain: 40, Mounting Type: Surface Mount, Maximum Supply Current: 24 mA, Dimensions: 5 x 4 x 1.5mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, MPN: MC100LVEL16DG

GBP 4.90

1

onsemi Optocoupler, Max. Forward 1.8 V, Max. Input 16 mA, 10.3mm Length, Surface Mount Mounting Style

onsemi Optocoupler, Max. Forward 1.8 V, Max. Input 16 mA, 10.3mm Length, Surface Mount Mounting Style, Isolation Voltage: 4243 (Minimum)Vrms, Rise Time: 50ns, Minimum Operating Temperature: -40°C, Maximum Operating Temperature: +100°C, Width: 7.5mm, Depth: 2.35mm, Dimensions: 10.3 x 7.5 x 2.35 mm, Input Type: LED, Operating Temperature Range: -40 → +100 °C, Output Type: Current, MPN: FOD8334R2

GBP 8.57

1

onsemi 1.1GHz VCO Oscillator, 8-Pin SOIC-8 MC100EL1648DG

onsemi 1.1GHz VCO Oscillator, 8-Pin SOIC-8 MC100EL1648DG, Output Level: ECL, Minimum Operating Temperature: -40°C, Maximum Operating Temperature: 85°C, Dimensions: 5 x 4 x 1.5mm

GBP 7.59

1

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onsemi FAN9673Q, Power Factor Controller, 40 kHz, 30 V 32-Pin, LQFP

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-247 NTHL082N65S3HF

onsemi 2N6284G NPN Transistor, 40 A, 100 V dc, 3-Pin TO-204AA

onsemi FAN9673Q, Power Factor Controller, 40 kHz, 30 V 32-Pin, LQFP

onsemi N-Channel MOSFET, 553.8 A, 40 V, 8-Pin DFNW NVMTS0D4N04CLTXG

onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW NVMTS0D7N04CLTXG

onsemi N-Channel MOSFET, 433 A, 40 V, 8-Pin DFNW NVMTS0D7N04CLTXG

onsemi 2N3771G NPN Transistor, 30 A, 40 V, 2-Pin TO-204AA

onsemi 2N3771G NPN Transistor, 30 A, 40 V, 2-Pin TO-204AA

onsemi N-Channel MOSFET, 40 A, 650 V, 3-Pin TO-220 NTPF082N65S3F

onsemi ON Semiconductor FND42060F2 Intelligent Power Module, 600 V 20 A, 40 (Peak) A 26-Pin, SPMAA

onsemi ON Semiconductor FND42060F2 Intelligent Power Module, 600 V 20 A, 40 (Peak) A 26-Pin, SPMAA

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F

onsemi N-Channel MOSFET, 76 A, 600 V, 3-Pin TO-247 FCH041N60F

onsemi N-Channel MOSFET, 76 A, 650 V, 3-Pin TO-247 FCH041N65F

onsemi MC100EL16DG Differential Line Receiver, 8-Pin SOIC

onsemi MC100LVEL16D Differential Line Receiver, 8-Pin SOIC

onsemi Optocoupler, Max. Forward 1.8 V, Max. Input 16 mA, 10.3mm Length, Surface Mount Mounting Style

onsemi 1.1GHz VCO Oscillator, 8-Pin SOIC-8 MC100EL1648DG

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