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onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ’7L NVBG020N120SC1OS

onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ7L NVBG020N120SC1OS, Maximum Drain Source Resistance: 0.028 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 25.21

1

onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ’7L NVBG020N120SC1

onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ7L NVBG020N120SC1, Maximum Drain Source Resistance: 0.028 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 22.22

1

onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ’7L NVBG020N120SC1OS

onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ7L NVBG020N120SC1OS, Package Type: D2PAKâˆ7L, Maximum Drain Source Resistance: 0.028 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.3V

GBP 24.70

1

onsemi MC100EP016AMNG 8-stage Surface Mount Binary Counter ECL, 32-Pin QFN

onsemi MC100EP016AMNG 8-stage Surface Mount Binary Counter ECL, 32-Pin QFN, Operation Mode: Up Counter, Minimum Operating Supply Voltage: 3 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 5 x 5 x 0.95mm, Direction Type: Uni-Directional

GBP 17.65

1

onsemi MC100EP016AMNG 8-stage Surface Mount Binary Counter ECL, 32-Pin QFN

onsemi MC100EP016AMNG 8-stage Surface Mount Binary Counter ECL, 32-Pin QFN, Operation Mode: Up Counter, Minimum Operating Supply Voltage: 3 V, Maximum Operating Supply Voltage: 3.6 V, Dimensions: 5 x 5 x 0.95mm, Direction Type: Uni-Directional, Maximum Operating Temperature: 70 °C, Minimum Operating Temperature: -40 °C

GBP 19.13

1

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onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ’7L NVBG020N120SC1OS

onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ’7L NVBG020N120SC1

onsemi SiC MOSFET, 98 A, 1200 V, 8-Pin D2PAKâˆ’7L NVBG020N120SC1OS

onsemi MC100EP016AMNG 8-stage Surface Mount Binary Counter ECL, 32-Pin QFN

onsemi MC100EP016AMNG 8-stage Surface Mount Binary Counter ECL, 32-Pin QFN

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