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onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

GBP 15.00

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

GBP 15.12

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

GBP 14.97

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

GBP 14.84

1

onsemi Dual SiC MOSFET, 38 A, 650 V, 12-Pin APMCD-A16 FAM65CR51ADZ2

GBP 17.42

1

onsemi NFAM3065L4BOS Motor Driver IC, 650 V Â±60A 39-Pin, DIP39

onsemi NFAM3065L4BOS Motor Driver IC, 650 V Â±60A 39-Pin, DIP39, Maximum Output Current: 30A, Maximum Supply Voltage: 450 V

GBP 12.61

1

onsemi ON Semiconductor NFAM3065L4B Motor Driver IC, 650 V Â±60A 39-Pin, DIP39

onsemi ON Semiconductor NFAM3065L4B Motor Driver IC, 650 V Â±60A 39-Pin, DIP39, Maximum Output Current: 30A, Maximum Supply Voltage: 450 V

GBP 12.40

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.21

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.41

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.36

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.33

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.50

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.19

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 17.41

1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 0.082 Ω, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 4

GBP 16.19

1

onsemi ON Semi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

onsemi ON Semi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Power Dissipation: 238 W, Transistor Configuration: Single, Maximum Operating Frequency: 1 MHz, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C

GBP 8.98

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 11.19

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 9.14

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 10.34

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 11.77

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 9.41

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.15

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.22

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.38

1

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3F

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 446 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.83

1

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onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Dual SiC MOSFET, 38 A, 650 V, 12-Pin APMCD-A16 FAM65CR51ADZ2

onsemi NFAM3065L4BOS Motor Driver IC, 650 V Â±60A 39-Pin, DIP39

onsemi ON Semiconductor NFAM3065L4B Motor Driver IC, 650 V Â±60A 39-Pin, DIP39

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ2

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DZ1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS1

onsemi Quad MOSFET, 26 A, 650 V, 16-Pin APMCA-A16 NXV65HR82DS2

onsemi ON Semi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247AD NTHLD040N65S3HFOS

onsemi N-Channel MOSFET, 65 A, 650 V, 3-Pin TO-247 NTHL040N65S3F

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