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onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 9.14

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 11.77

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 11.19

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 10.34

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 9.41

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NVHL027N65S3F

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NVHL027N65S3F, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Automotive Standard: AEC-Q101

GBP 10.04

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL027N65S3HFOS

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL027N65S3HFOS, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mO, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.3V

GBP 9.85

1

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 A04 FCH023N65S3L4

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 A04 FCH023N65S3L4, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V

GBP 10.93

1

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 A04 FCH023N65S3L4

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 A04 FCH023N65S3L4, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V

GBP 10.04

1

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onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NVHL027N65S3F

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTHL027N65S3HFOS

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 A04 FCH023N65S3L4

onsemi N-Channel MOSFET, 75 A, 650 V, 4-Pin TO-247 A04 FCH023N65S3L4

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