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onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole, Maximum Power Dissipation: 19 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.46

1

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole, Maximum Power Dissipation: 113 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.70

1

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Maximum Power Dissipation: 106 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 15.34

1

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Maximum Power Dissipation: 106 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.68

1

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole, Maximum Power Dissipation: 25 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 17.20

1

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole, Maximum Power Dissipation: 25 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.30

1

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole, Maximum Power Dissipation: 113 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.70

1

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole, Maximum Power Dissipation: 19 W, Switching Speed: 20kHz, Dimensions: 44 x 26.8 x 5.5mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.50

1

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 25 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.86

1

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 19 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 16.46

1

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 113 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 15.35

1

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole, Switching Speed: 20kHz, Maximum Power Dissipation: 106 W, Dimensions: 44 x 26.8 x 5.5mm, Length: 44mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, Width: 26.8mm

GBP 14.82

1

onsemi ON Semi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

onsemi ON Semi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247, Mounting Type: Through Hole, Maximum Power Dissipation: 238 W, Transistor Configuration: Single, Maximum Operating Frequency: 1 MHz, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C

GBP 8.98

1

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 535 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 16.25 x 5.3 x 21.4mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 9.09

1

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A, Mounting Type: Through Hole, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Number of Elements per Chip: 1, Forward Diode Voltage: 2.4V, Height: 16.51mm, Length: 10.67mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, Width: 4.8mm

GBP 11.85

1

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A, Mounting Type: Through Hole, Maximum Power Dissipation: 240 W, Transistor Configuration: Single, Number of Elements per Chip: 1, Forward Diode Voltage: 2.4V, Height: 16.51mm, Length: 10.67mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, Width: 4.8mm

GBP 10.21

1

onsemi N-Channel MOSFET, 9 A, 1500 V, 3-Pin TO-3PF NDUL09N150CG

onsemi N-Channel MOSFET, 9 A, 1500 V, 3-Pin TO-3PF NDUL09N150CG, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Power Dissipation: 78 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.5V, Height: 24.7mm, Length: 15.7mm

GBP 8.78

1

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E, Mounting Type: Through Hole, Maximum Drain Source Resistance: 41 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 592 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.82mm, Length: 15.87mm

GBP 8.93

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 9.14

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 11.19

1

onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204

onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 38.86 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +200 °C

GBP 10.65

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 10.34

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 23 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.2V

GBP 9.41

1

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155, Mounting Type: Through Hole, Maximum Drain Source Resistance: 27.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 595 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.3V

GBP 11.77

1

onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204

onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204, Mounting Type: Through Hole, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 38.86 x 26.67 x 8.51mm, Maximum Base Emitter Saturation Voltage: 4 V, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +200 °C

GBP 13.84

1

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onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF15CH60BT IGBT Module, 15 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FSBF5CH60B IGBT Module, 5 A 600 V, 27-Pin SPM27 JA, Through Hole

onsemi FPDB40PH60B IGBT Module, 40 A 600 V, 27-Pin SPM27 GC, Through Hole

onsemi FSBB30CH60C IGBT Module, 30 A 600 V, 27-Pin SPM27 EC, Through Hole

onsemi ON Semi AFGHL50T65SQDC NPN Bipolar Transistor, 100 A, 650 V, 3-Pin TO-247

onsemi NGTB50N120FL2WG IGBT, 100 A 1200 V, 3-Pin TO-247, Through Hole

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A

onsemi SiC SiC Power Module, 2 + Tab-Pin TO-220 FFSP3065A

onsemi N-Channel MOSFET, 9 A, 1500 V, 3-Pin TO-3PF NDUL09N150CG

onsemi N-Channel MOSFET, 77 A, 600 V, 3-Pin TO-247 FCH041N60E

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 FCH023N65S3-F155

onsemi N-Channel MOSFET, 75 A, 650 V, 3-Pin TO-247 NTH027N65S3F-F155

onsemi MJ14002G NPN Transistor, 60 A, 80 V, 2-Pin TO-204

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