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onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A

onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A, Mounting Type: Through Hole, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 137 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.4mm, Length: 10.67mm

GBP 1.64

1

onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A

onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A, Mounting Type: Through Hole, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 137 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.4mm, Length: 10.67mm

GBP 1.61

1

onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A

onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A, Mounting Type: Through Hole, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 137 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.4mm, Length: 10.67mm

GBP 1.94

1

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247

GBP 2.99

1

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G, Mounting Type: Surface Mount, Diode Configuration: Dual Common Anode, Rectifier Type: Switching, Peak Reverse Recovery Time: 6ns, Peak Non-Repetitive Forward Surge Current: 500mA

GBP 0.02

1

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G, Mounting Type: Surface Mount, Diode Configuration: Dual Common Anode, Rectifier Type: Switching, Peak Reverse Recovery Time: 6ns, Peak Non-Repetitive Forward Surge Current: 500mA

GBP 0.04

1

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G, Mounting Type: Surface Mount, Diode Configuration: Dual Common Anode, Rectifier Type: Switching, Peak Reverse Recovery Time: 6ns, Peak Non-Repetitive Forward Surge Current: 500mA

GBP 0.03

1

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Transistor Configuration: Single

GBP 2.87

1

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 375 W, Number of Transistors: 1, Transistor Configuration: Single

GBP 3.51

1

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.56

1

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 4.16

1

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Dimensions: 1.65 x 0.9 x 0.8mm, Minimum Operating Temperature: -55 °C, Maximum Collector Emitter Saturation Voltage: 0.25 V dc, Automotive Standard: AEC-Q101

GBP 0.02

1

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Dimensions: 1.65 x 0.9 x 0.8mm, Minimum Operating Temperature: -55 °C, Maximum Collector Emitter Saturation Voltage: 0.25 V dc, Automotive Standard: AEC-Q101

GBP 0.08

1

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Dimensions: 1.65 x 0.9 x 0.8mm, Minimum Operating Temperature: -55 °C, Maximum Collector Emitter Saturation Voltage: 0.25 V dc, Automotive Standard: AEC-Q101

GBP 0.02

1

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75, Mounting Type: Surface Mount, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Dimensions: 1.65 x 0.9 x 0.8mm, Minimum Operating Temperature: -55 °C, Maximum Collector Emitter Saturation Voltage: 0.25 V dc, Automotive Standard: AEC-Q101

GBP 0.04

1

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Transistor Configuration: Single, Length: 15.87mm, Width: 4.82mm, Height: 20.82mm, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 3.86

1

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75, Maximum Continuous Collector Current: 100 mA, Mounting Type: Surface Mount, Minimum DC Current Gain: 15, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 0.25 V dc, Automotive Standard: AEC-Q101, Dimensions: 1.65 x 0.9 x 0.8mm

GBP 0.05

1

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75, Maximum Continuous Collector Current: 100 mA, Mounting Type: Surface Mount, Minimum DC Current Gain: 80, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Collector Emitter Saturation Voltage: 0.25 V dc, Automotive Standard: AEC-Q101, Dimensions: 1.65 x 0.9 x 0.8mm

GBP 0.03

1

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 1.98

1

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK HUF75645S3ST

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK HUF75645S3ST, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 11.33mm, Length: 10.67mm

GBP 1.56

1

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK FDB86135

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK FDB86135, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.5 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 227 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 0.72

1

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK HUF75645S3ST

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK HUF75645S3ST, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 310 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 11.33mm, Length: 10.67mm

GBP 2.76

1

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 2.33

1

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 8.8 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Length: 10.67mm

GBP 1.14

1

onsemi N-Channel MOSFET, 75 A, 60 V, 3-Pin TO-220 NDP7060

onsemi N-Channel MOSFET, 75 A, 60 V, 3-Pin TO-220 NDP7060, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 24 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.3mm, Length: 10.67mm

GBP 4.25

1

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onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A

onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A

onsemi N-Channel MOSFET, 75 A, 75 V, 3-Pin TO-220AB FDP75N08A

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G

onsemi 200mA, Dual Diode, 3-Pin SC-75 BAW56TT1G

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247

onsemi AFGHL75T65SQ IGBT, 75 A 650 V, 3-Pin TO-247

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi HGTG30N60A4 IGBT, 75 A 600 V, 3-Pin TO-247, Through Hole

onsemi DTC143EET1G NPN Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi DTA114YET1G PNP Digital Transistor, 50 V dc, 3-Pin SC-75

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK HUF75645S3ST

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK FDB86135

onsemi N-Channel MOSFET, 75 A, 100 V, 3-Pin D2PAK HUF75645S3ST

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08

onsemi N-Channel MOSFET, 120 A, 75 V, 3-Pin D2PAK FDB088N08

onsemi N-Channel MOSFET, 75 A, 60 V, 3-Pin TO-220 NDP7060

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