onsemi P-Channel MOSFET, 35 A, 30 V, 8-Pin Power 56 FDMS4435BZ
onsemi P-Channel MOSFET, 35 A, 30 V, 8-Pin Power 56 FDMS4435BZ, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 37 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 39 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 1.05mm