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onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole, Maximum Power Dissipation: 453 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.14

1

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole, Maximum Power Dissipation: 453 W, Transistor Configuration: Single, Dimensions: 15.87 x 4.82 x 20.82mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 8.28

1

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole, Transistor Type: NPN, Maximum DC Collector Current: 150 A, Maximum Power Dissipation: 453 W, Transistor Configuration: Single, Maximum Operating Frequency: 1 MHz, Dimensions: 15.87 x 4.82 x 20.82mm, Length: 15.87mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C

GBP 7.06

1

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 NTZS3151PG

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 NTZS3151PG, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 210 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm, Length: 1.7mm, MPN: NTZS3151PT1G

GBP 0.09

1

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 210 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm, Length: 1.7mm

GBP 0.22

1

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 240 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 210 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Height: 0.6mm, Length: 1.7mm

GBP 0.33

1

onsemi, 43V Zener Diode 5% 1.5 W SMT 2-Pin SMA

onsemi, 43V Zener Diode 5% 1.5 W SMT 2-Pin SMA, Diode Configuration: Single, Mounting Type: Surface Mount, Zener Type: Voltage Regulator, Test Current: 8.7mA, Maximum Zener Impedance: 53 Ω, 950 Ω, Maximum Reverse Leakage Current: 500nA, Length: 4.57mm, Width: 2.92mm, Dimensions: 4.57 x 2.92 x 2.05mm, MPN: 1SMA5940BT3G

GBP 0.15

1

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±6 V, Automotive Standard: AEC-Q101

GBP 0.18

1

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±6 V, Automotive Standard: AEC-Q101

GBP 0.13

1

onsemi, 43V Zener Diode 5% 3 W SMT 2-Pin SMB

onsemi, 43V Zener Diode 5% 3 W SMT 2-Pin SMB, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Zener Type: Voltage Regulator, Test Current: 8.7mA, Maximum Zener Impedance: 53 Ω, 950 Ω, Maximum Reverse Leakage Current: 1µA, Length: 4.6mm, Width: 3.95mm, Dimensions: 4.6 x 3.95 x 2.28mm, MPN: 1SMB5940BT3G

GBP 0.32

1

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 950 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 0.45V, Maximum Power Dissipation: 300 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±6 V, Automotive Standard: AEC-Q101

GBP 0.07

1

onsemi NST65011MW6G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363

onsemi NST65011MW6G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 1mm, Maximum Base Emitter Saturation Voltage: 950 mV, Maximum Collector Emitter Saturation Voltage: 600 mV, MPN: NST65011MW6T1G

GBP 0.02

1

onsemi NST65011MW6G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363

onsemi NST65011MW6G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Power Dissipation: 380 mW, Transistor Configuration: Isolated, Maximum Collector Base Voltage: 80 V, Maximum Emitter Base Voltage: 6 V, Maximum Operating Frequency: 100 MHz, Number of Elements per Chip: 2, Dimensions: 2.2 x 1.35 x 1mm, Maximum Base Emitter Saturation Voltage: 950 mV, Maximum Collector Emitter Saturation Voltage: 600 mV, MPN: NST65011MW6T1G

GBP 0.01

1

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onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi FGY75T95LQDTOS IGBT 950 V, 3-Pin TO-247, Through Hole

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 NTZS3151PG

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G

onsemi P-Channel MOSFET, 950 mA, 20 V, 6-Pin SOT-563 ON Semiconductor NTZS3151PT1G

onsemi, 43V Zener Diode 5% 1.5 W SMT 2-Pin SMA

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G

onsemi, 43V Zener Diode 5% 3 W SMT 2-Pin SMB

onsemi N-Channel MOSFET, 915 mA, 20 V, 3-Pin SC-89 NTE4153NT1G

onsemi NST65011MW6G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363

onsemi NST65011MW6G Dual NPN Transistor, 100 mA, 65 V, 6-Pin SOT-363

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