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onsemi N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK FDD7N25LZTM

onsemi N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK FDD7N25LZTM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 570 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 56 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 0.31

1

onsemi N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK FDD7N25LZTM

onsemi N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK FDD7N25LZTM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 570 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 56 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 0.54

1

onsemi N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK FDD7N25LZTM

onsemi N-Channel MOSFET, 6.2 A, 250 V, 3-Pin DPAK FDD7N25LZTM, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 570 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 56 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Number of Elements per Chip: 1, Height: 2.39mm, Length: 6.73mm

GBP 0.71

1