onsemi N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK FDD8882
onsemi N-Channel MOSFET, 55 A, 30 V, 3-Pin DPAK FDD8882, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 19 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 55 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm