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Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.13

1

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Automotive Standard: AEC-Q101

GBP 0.41

1

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.6V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.05

1

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Automotive Standard: AEC-Q101

GBP 0.18

1

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.6V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.04

1

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.45V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 430 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Automotive Standard: AEC-Q101

GBP 0.10

1

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.14

1

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.6V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±12 V, Automotive Standard: AEC-Q101

GBP 0.22

1

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.29

1

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.16

1

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.6V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Automotive Standard: AEC-Q101

GBP 0.30

1

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.34

1

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.45V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 430 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Automotive Standard: AEC-Q101

GBP 0.10

1

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.1 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 0.45V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 430 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±8 V, Automotive Standard: AEC-Q101

GBP 0.10

1

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 13.6 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.14

1

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 19 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.61

1

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 19 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.68

1

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 19 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.30

1

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 19.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +16 V, Forward Diode Voltage: 1.2V

GBP 0.38

1

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 19.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +16 V, Forward Diode Voltage: 1.2V

GBP 0.07

1

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 19.2 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +16 V, Forward Diode Voltage: 1.2V

GBP 0.06

1

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Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 2.25 A, 30 V, 6-Pin SC-70 SQA470EEJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 30 V, 6-Pin SC-70 SQA403EJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 2.68 A, 20 V, 6-Pin SC-70 SQA401EEJ-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3

Vishay Siliconix N-Channel MOSFET, 440 mA, 60 V, 6-Pin SC-70 SQ1464EEH-T1_GE3

Vishay Siliconix P-Channel MOSFET, 10 A, 40 V, 6-Pin SC-70 SQA405EJ-T1_GE3

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 12 A, 60 V, 6-Pin SC-70 SiA106DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3

Vishay Siliconix N-Channel MOSFET, 40 A, 25 V, 6-Pin SC-70 SiAA00DJ-T1-GE3

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