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Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 34 W, 34 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.41

1

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 34 W, 34 W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.41

1

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 34 (N Channel) W, 34 (P Channel) W, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101, Forward Diode Voltage: 1.2V

GBP 0.40

1

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 26.6 W, 60 W, Maximum Gate Source Voltage: +16 V, +20 V, -12 V, -16 V, Forward Diode Voltage: 1.2V, Height: 0.7mm, MPN: SIZF916DT-T1-GE3

GBP 0.39

1

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 26.6 W, 60 W, Maximum Gate Source Voltage: +16 V, +20 V, -12 V, -16 V, Forward Diode Voltage: 1.2V, Height: 0.7mm, MPN: SIZF916DT-T1-GE3

GBP 0.39

1

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 26.6 (Channnel 1) W, 60 (Channel 2) W, Maximum Gate Source Voltage: +16 (Channel 2) V, +20 (Channnel 1) V, -12 (Channel 2) V, -16 (Channnel 1) V, Forward Diode Voltage: 1.2V, Height: 0.7mm, MPN: SIZF916DT-T1-GE3

GBP 0.48

1

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V

GBP 0.21

1

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V

GBP 0.25

1

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±25 V

GBP 0.20

1

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.92

1

Vishay Siliconix P-Channel MOSFET Transistor, 2.9 A, 60 V, 6-Pin TSOP SI3459BDV-T1-GE3

Vishay Siliconix P-Channel MOSFET Transistor, 2.9 A, 60 V, 6-Pin TSOP SI3459BDV-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 288 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.3 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 1mm, Length: 3.1mm

GBP 0.20

1

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.84

1

Vishay Siliconix N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB IRF520PBF

Vishay Siliconix N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB IRF520PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.8V, Height: 15.85mm

GBP 0.52

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.36

1

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.59

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.36

1

Vishay Siliconix N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB IRF520PBF

Vishay Siliconix N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB IRF520PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.8V, Height: 15.85mm

GBP 0.99

1

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.58

1

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 10 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.99

1

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 62.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.77

1

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.79

1

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 136 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.56

1

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3, Package Type: TO-252, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 107 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V

GBP 0.55

1

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.1V, Minimum Gate Threshold Voltage: 2.4V, Maximum Power Dissipation: 65.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -16 V, +20 V

GBP 0.44

1

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 52 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.1V

GBP 0.11

1

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Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 30 (N Channel) A, 30 (P Channel) A, 40 V, 8-Pin SO-8 SQJ504EP-T1_GE3

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5

Vishay Siliconix Dual N-Channel MOSFET, 40 (Channnel 1) A, 60 (Channel 2) A, 30 V, 8-Pin PowerPAIR 6 x 5

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 35 A, 30 V, 8-Pin 1212 SiSH617DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix P-Channel MOSFET Transistor, 2.9 A, 60 V, 6-Pin TSOP SI3459BDV-T1-GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB IRF520PBF

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 9.2 A, 100 V, 3-Pin TO-220AB IRF520PBF

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix N-Channel MOSFET, 133 A, 40 V, 8-Pin SO-8 SiR112DP-T1-RE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 30 V, 3 + Tab-Pin DPAK SQD40031EL_GE3

Vishay Siliconix P-Channel MOSFET, 100 A, 40 V, 3 + Tab-Pin DPAK SQD40061EL_GE3

Vishay Siliconix N-Channel MOSFET, 60 A, 40 V, 8-Pin 1212 SiSS12DN-T1-GE3

Vishay Siliconix N-Channel MOSFET, 17.2 A, 200 V, 8-Pin SO-8 Si7172ADP-T1-RE3

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