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Vishay Rectifier; 1.0A IF; 1.1V; 600V; 30A Ifms; 5.0uA IR; DO-204AL (DO-41); -55C

Vishay Rectifier; 1.0A IF; 1.1V; 600V; 30A Ifms; 5.0uA IR; DO-204AL (DO-41); -55C, MPN: 1N4005-E3\54

GBP 0.02

1

Vishay N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3

Vishay N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3, Maximum Drain Source Resistance: 0.088 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.00

1

Vishay N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3

Vishay N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3, Maximum Drain Source Resistance: 0.088 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.71

1

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Small Signal, Maximum Forward Voltage Drop: 600mV, Peak Reverse Recovery Time: 10ns, Diameter: 1.7mm

GBP 0.04

1

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Small Signal, Maximum Forward Voltage Drop: 600mV, Peak Reverse Recovery Time: 10ns, Diameter: 1.7mm

GBP 0.10

1

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR, Mounting Type: Through Hole, Diode Configuration: Single, Rectifier Type: Small Signal, Maximum Forward Voltage Drop: 600mV, Peak Reverse Recovery Time: 10ns, Diameter: 1.7mm

GBP 0.12

1

Vishay DIODE; 300A IF; 1.40 V (MAX.); 600V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C

Vishay DIODE; 300A IF; 1.40 V (MAX.); 600V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C, MPN: 300U60A

GBP 35.54

1

Vishay DIODE; 300A IF; 1.40 V (MAX.); 100V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C

Vishay DIODE; 300A IF; 1.40 V (MAX.); 100V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C, MPN: 300U10A

GBP 35.00

1

Vishay, Colour Sensor, Ambient Light Spectralsensitivity to Real Human Eye Responses 650 nm I2C 4-Pin OPLGA

Vishay, Colour Sensor, Ambient Light Spectralsensitivity to Real Human Eye Responses 650 nm I2C 4-Pin OPLGA, Peak Wavelength: 450 (Blue) nm, 550 (Green) nm, 650 (Red) nm, Mounting Type: Surface Mount, Dimensions: 2 x 1.25 x 1mm, Length: 2mm, Maximum Operating Supply Voltage: 3.6 V, Maximum Operating Temperature: +85 °C, Minimum Operating Supply Voltage: 2.5 V, Minimum Operating Temperature: -40 °C, Technology: Analogue, Digital, Width: 1.25mm, MPN: VEML6040A3OG

GBP 1.32

1

Vishay LED; 280 ucd (Min.) @ 1 mA; 650 nm (Typ.) @ 1 mA; 1.8 V (Typ.) @ 1 mA; 5 V;

Vishay LED; 280 ucd (Min.) @ 1 mA; 650 nm (Typ.) @ 1 mA; 1.8 V (Typ.) @ 1 mA; 5 V;, MPN: TDSR1360

GBP 0.70

1

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.18

1

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 3.55

1

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.78

1

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3, Maximum Drain Source Resistance: 0.193 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 2.63

1

Vishay Schottky Diode 30V 1A DO-204AL

Vishay Schottky Diode 30V 1A DO-204AL, MPN: 1N5818-E3/54

GBP 0.08

1

Vishay Diode Rectifier 500V 3A DO-201AD

Vishay Diode Rectifier 500V 3A DO-201AD, MPN: 1N5405-E3/54

GBP 0.12

1

Vishay Diode Switching 100V 0.5A DO-213AA

Vishay Diode Switching 100V 0.5A DO-213AA, MPN: GL34B-E3/98

GBP 0.10

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 0.61

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3, Package Type: TO-252, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.29

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 1.39

1

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3, Maximum Drain Source Resistance: 0.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 0.82

1

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3, Maximum Drain Source Resistance: 0.125 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 5.57

1

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3, Maximum Drain Source Resistance: 0.071 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 4.02

1

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3, Maximum Drain Source Resistance: 0.071 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 7.03

1

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Price (EUR)

Vishay Rectifier; 1.0A IF; 1.1V; 600V; 30A Ifms; 5.0uA IR; DO-204AL (DO-41); -55C

Vishay N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3

Vishay N-Channel MOSFET, 29 A, 650 V, 3-Pin TO-220AB SiHP105N60EF-GE3

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay 30V 15A, Schottky Diode, 2-Pin DO-35 (DO-204AH) SD103B-TR

Vishay DIODE; 300A IF; 1.40 V (MAX.); 600V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C

Vishay DIODE; 300A IF; 1.40 V (MAX.); 100V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C

Vishay, Colour Sensor, Ambient Light Spectralsensitivity to Real Human Eye Responses 650 nm I2C 4-Pin OPLGA

Vishay LED; 280 ucd (Min.) @ 1 mA; 650 nm (Typ.) @ 1 mA; 1.8 V (Typ.) @ 1 mA; 5 V;

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 16 A, 25 A, 650 V, 3-Pin TO-220AB SIHP125N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay N-Channel MOSFET, 12 A, 18 A, 650 V, 3-Pin TO-220AB SIHP186N60EF-GE3

Vishay Schottky Diode 30V 1A DO-204AL

Vishay Diode Rectifier 500V 3A DO-201AD

Vishay Diode Switching 100V 0.5A DO-213AA

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin DPAK SIHD690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 4 A, 6.4 A, 650 V, 3-Pin TO-220AB SIHP690N60E-GE3

Vishay N-Channel MOSFET, 3.5 A, 5.6 A, 650 V, 5-Pin PowerPAK SO-8L SIHJ690N60E-T1-GE3

Vishay N-Channel MOSFET, 14 A, 23 A, 650 V, 4-Pin PowerPAK 8 x 8 SIHH125N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

Vishay N-Channel MOSFET, 23 A, 36 A, 650 V, 5-Pin PowerPAK 8 x 8 SIHH070N60EF-T1GE3

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