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Vishay N channel ;VBRDSS 500 V; RDSon 180 mOh

Vishay N channel ;VBRDSS 500 V; RDSon 180 mOh, MPN: IRFP31N50LPBF

GBP 5.22

1

Vishay N channel ;VBRDSS 500 V; RDSon 180 mOh

Vishay N channel ;VBRDSS 500 V; RDSon 180 mOh, MPN: IRFP31N50LPBF

GBP 4.47

1

Vishay 100MΩ Metal Oxide Resistor 4W ±1% ROX100100MFKEL

Vishay 100MΩ Metal Oxide Resistor 4W ±1% ROX100100MFKEL, Maximum Operating Temperature: +180°C, Minimum Operating Temperature: -55°C

GBP 5.64

1

Vishay 1500μF Polymer Capacitor 6.3V dc, Surface Mount - MAL218097309E3

Vishay 1500μF Polymer Capacitor 6.3V dc, Surface Mount - MAL218097309E3, Capacitance: 1500µF, Dimensions: 10.4 x 10.4 x 12.6mm, Length: 10.4mm, Minimum Operating Temperature: -55°C, Maximum Operating Temperature: +105°C, Lead Pitch: 4.7mm, Lifetime: 2500h, Series: 180 CPS, Dissipation Factor: 0.15%, Leakage Current: 1890 μA

GBP 5.20

1

Vishay 2200μF Electrolytic Capacitor 40V dc, Through Hole - MAL202117222E3

Vishay 2200μF Electrolytic Capacitor 40V dc, Through Hole - MAL202117222E3, Capacitance: 2200µF, Dimensions: 18 (Dia.) x 30mm, Minimum Operating Temperature: -40°C, Diameter: 18mm, Maximum Operating Temperature: +85°C, Lifetime: 8000h, Series: 021 ASM, Equivalent Series Resistance: 118mΩ, Leakage Current: 180 μA, Ripple Current: 1.39A, Tolerance: ±20%

GBP 4.46

1

Vishay 1.2 μH ±20% Iron Powder Leaded Inductor, Max SRF:150MHz, 80A Idc, 0.3mΩ Rdc, IHDM-1008BC-30

Vishay 1.2 μH ±20% Iron Powder Leaded Inductor, Max SRF:150MHz, 80A Idc, 0.3mΩ Rdc, IHDM-1008BC-30, Mounting Type: Through Hole, Length: 25.53mm, Depth: 20.73mm, Height: 21.75mm, Dimensions: 25.53 x 20.73 x 21.75mm, Lead Diameter: 4mm, Maximum Operating Temperature: +180°C, Minimum Operating Temperature: -40°C, MPN: IHDM1008BCEV1R2M30

GBP 6.79

1

Vishay 10 μH ±20% Iron Powder Leaded Inductor, Max SRF:8MHz, 30A Idc, 2mΩ Rdc, IHDM-1008BC-30

Vishay 10 μH ±20% Iron Powder Leaded Inductor, Max SRF:8MHz, 30A Idc, 2mΩ Rdc, IHDM-1008BC-30, Mounting Type: Through Hole, Length: 25.53mm, Depth: 20.73mm, Height: 21.75mm, Dimensions: 25.53 x 20.73 x 21.75mm, Lead Diameter: 4mm, Maximum Operating Temperature: +180°C, Minimum Operating Temperature: -40°C, MPN: IHDM1008BCEV100M30

GBP 6.79

1

Vishay 4.7 μH ±20% Iron Powder Leaded Inductor, Max SRF:15MHz, 45A Idc, 0.95mΩ Rdc, IHDM-1008BC-30

Vishay 4.7 μH ±20% Iron Powder Leaded Inductor, Max SRF:15MHz, 45A Idc, 0.95mΩ Rdc, IHDM-1008BC-30, Mounting Type: Through Hole, Length: 25.53mm, Depth: 20.73mm, Height: 21.75mm, Dimensions: 25.53 x 20.73 x 21.75mm, Lead Diameter: 4mm, Maximum Operating Temperature: +180°C, Minimum Operating Temperature: -40°C, MPN: IHDM1008BCEV4R7M30

GBP 6.99

1

Vishay 4.7 μH ±20% Iron Powder Leaded Inductor, Max SRF:15MHz, 45A Idc, 0.95mΩ Rdc, IHDM-1008BC-30

Vishay 4.7 μH ±20% Iron Powder Leaded Inductor, Max SRF:15MHz, 45A Idc, 0.95mΩ Rdc, IHDM-1008BC-30, Mounting Type: Through Hole, Length: 25.53mm, Depth: 20.73mm, Height: 21.75mm, Dimensions: 25.53 x 20.73 x 21.75mm, Lead Diameter: 4mm, Maximum Operating Temperature: +180°C, Minimum Operating Temperature: -40°C, MPN: IHDM1008BCEV4R7M30

GBP 8.23

1

Vishay 1.2 μH ±20% Iron Powder Leaded Inductor, Max SRF:150MHz, 80A Idc, 0.3mΩ Rdc, IHDM-1008BC-30

Vishay 1.2 μH ±20% Iron Powder Leaded Inductor, Max SRF:150MHz, 80A Idc, 0.3mΩ Rdc, IHDM-1008BC-30, Mounting Type: Through Hole, Length: 25.53mm, Depth: 20.73mm, Height: 21.75mm, Dimensions: 25.53 x 20.73 x 21.75mm, Lead Diameter: 4mm, Maximum Operating Temperature: +180°C, Minimum Operating Temperature: -40°C, MPN: IHDM1008BCEV1R2M30

GBP 8.23

1

Vishay 10 μH ±20% Iron Powder Leaded Inductor, Max SRF:8MHz, 30A Idc, 2mΩ Rdc, IHDM-1008BC-30

Vishay 10 μH ±20% Iron Powder Leaded Inductor, Max SRF:8MHz, 30A Idc, 2mΩ Rdc, IHDM-1008BC-30, Mounting Type: Through Hole, Length: 25.53mm, Depth: 20.73mm, Height: 21.75mm, Dimensions: 25.53 x 20.73 x 21.75mm, Lead Diameter: 4mm, Maximum Operating Temperature: +180°C, Minimum Operating Temperature: -40°C, MPN: IHDM1008BCEV100M30

GBP 8.23

1

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50APBF

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50APBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm, Length: 15.87mm

GBP 4.79

1

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50APBF

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50APBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.7mm, Length: 15.87mm

GBP 5.61

1

Vishay N-Channel MOSFET, 11 A, 500 V, 3-Pin TO-247AC IRFP448PBF

Vishay N-Channel MOSFET, 11 A, 500 V, 3-Pin TO-247AC IRFP448PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 600 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.7mm, Length: 15.87mm

GBP 4.88

1

Brand

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Merchant

Price (EUR)

Vishay N channel ;VBRDSS 500 V; RDSon 180 mOh

Vishay N channel ;VBRDSS 500 V; RDSon 180 mOh

Vishay 100MΩ Metal Oxide Resistor 4W ±1% ROX100100MFKEL

Vishay 1500μF Polymer Capacitor 6.3V dc, Surface Mount - MAL218097309E3

Vishay 2200μF Electrolytic Capacitor 40V dc, Through Hole - MAL202117222E3

Vishay 1.2 μH ±20% Iron Powder Leaded Inductor, Max SRF:150MHz, 80A Idc, 0.3mΩ Rdc, IHDM-1008BC-30

Vishay 10 μH ±20% Iron Powder Leaded Inductor, Max SRF:8MHz, 30A Idc, 2mΩ Rdc, IHDM-1008BC-30

Vishay 4.7 μH ±20% Iron Powder Leaded Inductor, Max SRF:15MHz, 45A Idc, 0.95mΩ Rdc, IHDM-1008BC-30

Vishay 4.7 μH ±20% Iron Powder Leaded Inductor, Max SRF:15MHz, 45A Idc, 0.95mΩ Rdc, IHDM-1008BC-30

Vishay 1.2 μH ±20% Iron Powder Leaded Inductor, Max SRF:150MHz, 80A Idc, 0.3mΩ Rdc, IHDM-1008BC-30

Vishay 10 μH ±20% Iron Powder Leaded Inductor, Max SRF:8MHz, 30A Idc, 2mΩ Rdc, IHDM-1008BC-30

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50APBF

Vishay N-Channel MOSFET, 11 A, 600 V, 3-Pin TO-247AC IRFPC50APBF

Vishay N-Channel MOSFET, 11 A, 500 V, 3-Pin TO-247AC IRFP448PBF

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