Vishay N-Channel MOSFET, 40 A, 600 V, 3 + Tab-Pin TO-220AB SIHP065N60E-GE3
Vishay N-Channel MOSFET, 40 A, 600 V, 3 + Tab-Pin TO-220AB SIHP065N60E-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 65 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V