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Vishay Potentiometer; 1 Kilohms; + 5%; 2 W @ degC; 44.7 V (Max.); 0.312 in.; -55 de

Vishay Potentiometer; 1 Kilohms; + 5%; 2 W @ degC; 44.7 V (Max.); 0.312 in.; -55 de, MPN: 534-1-2-102

GBP 34.06

Vishay DIODE; 300A IF; 1.40 V (MAX.); 100V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C

Vishay DIODE; 300A IF; 1.40 V (MAX.); 100V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C, MPN: 300U10A

GBP 35.00

Vishay DIODE; 300A IF; 1.40 V (MAX.); 600V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C

Vishay DIODE; 300A IF; 1.40 V (MAX.); 600V; 0.18K/W; 40MA IR; DO-205AB (DO-9); -65C, MPN: 300U60A

GBP 35.54

Vishay DIODE; 300 A; 1.40 V (MAX.); 600 V; 0.18 K/W DC OPERATION; DO-9; -65 DEGC; 200

Vishay DIODE; 300 A; 1.40 V (MAX.); 600 V; 0.18 K/W DC OPERATION; DO-9; -65 DEGC; 200, MPN: 300UR60A

GBP 35.47

Vishay VS-GB70NA60UF, SOT-227, N-Channel IGBT Module, 111 A max, 600 V, Screw Mount

Vishay VS-GB70NA60UF, SOT-227, N-Channel IGBT Module, 111 A max, 600 V, Screw Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 447 W, Configuration: Single, Switching Speed: 150kHz, Dimensions: 38.3 x 25.7 x 12.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 20.30

Vishay VS-GB50LA120UX, SOT-227, N-Channel IGBT Module, 84 A max, 1200 V, Screw Mount

Vishay VS-GB50LA120UX, SOT-227, N-Channel IGBT Module, 84 A max, 1200 V, Screw Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 431 W, Configuration: Single, Switching Speed: 60kHz, Dimensions: 38.3 x 25.7 x 12.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 20.35