Vishay N-Channel MOSFET, 70 A, 600 V, 3-Pin TO-247AC SiHG70N60EF-GE3
Vishay N-Channel MOSFET, 70 A, 600 V, 3-Pin TO-247AC SiHG70N60EF-GE3, Mounting Type: Through Hole, Maximum Drain Source Resistance: 38 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 520 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.2V, Height: 20.82mm