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Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh, MPN: IRLR110PBF

GBP 0.74

1

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh, MPN: IRLR110PBF

GBP 0.63

1

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 43 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.01mm, Length: 10.41mm

GBP 0.82

1

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 43 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.01mm, Length: 10.41mm

GBP 0.82

1

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 3.37mm, Length: 5mm

GBP 0.76

1

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 3.37mm, Length: 5mm

GBP 0.51

1

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 3.37mm, Length: 5mm

GBP 0.85

1

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRL510PBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRL510PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 9.01mm, Length: 10.41mm

GBP 1.14

1

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 3.37mm, Length: 5mm

GBP 0.57

1

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 1.3 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 3.37mm, Length: 5mm

GBP 0.80

1

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRL510PBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRL510PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 3.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 9.01mm, Length: 10.41mm

GBP 0.86

1

Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF

Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.12mm, Length: 10.63mm

GBP 0.21

1

Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF

Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 27 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.12mm, Length: 10.63mm

GBP 0.22

1

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 43 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.01mm, Length: 10.41mm

GBP 0.51

1

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.8mm, Length: 6.7mm

GBP 0.59

1

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.8mm, Length: 6.7mm

GBP 0.33

1

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.1 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.8mm, Length: 6.7mm

GBP 0.35

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm, Length: 6.73mm

GBP 0.76

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.87

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 6.22mm, Length: 6.73mm

GBP 0.52

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 6.22mm, Length: 6.73mm

GBP 0.48

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.39mm, Length: 6.73mm

GBP 0.70

1

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 25 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 6.22mm, Length: 6.73mm

GBP 0.76

1

Vishay N-Channel MOSFET, 47 A, 500 V, 3-Pin Super-247 IRFPS43N50KPBF

Vishay N-Channel MOSFET, 47 A, 500 V, 3-Pin Super-247 IRFPS43N50KPBF, Mounting Type: Through Hole, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 540 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20.8mm, Length: 16.1mm

GBP 10.16

1

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin D2PAK IRF510SPBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin D2PAK IRF510SPBF, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 540 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 3.7 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.83mm, Maximum Operating Temperature: +175 °C

GBP 1.01

1

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Price (EUR)

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh

Vishay N channel ;VBRDSS 100 V; RDSon 540 mOh

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRL510PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRLD110PBF

Vishay N-Channel MOSFET, 1 A, 100 V, 4-Pin HVMDIP IRFD110PBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRL510PBF

Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF

Vishay N-Channel MOSFET, 4.5 A, 100 V, 3-Pin TO-220FP IRFI510GPBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin TO-220AB IRF510PBF

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF

Vishay N-Channel MOSFET, 1.5 A, 100 V, 3 + Tab-Pin SOT-223 IRFL110TRPBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRLU110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin DPAK IRFR110PBF

Vishay N-Channel MOSFET, 4.3 A, 100 V, 3-Pin IPAK IRFU110PBF

Vishay N-Channel MOSFET, 47 A, 500 V, 3-Pin Super-247 IRFPS43N50KPBF

Vishay N-Channel MOSFET, 5.6 A, 100 V, 3-Pin D2PAK IRF510SPBF

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