Vishay P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 SI2337DS-T1-GE3
Vishay P-Channel MOSFET, 1.75 A, 80 V, 3-Pin SOT-23 SI2337DS-T1-GE3, Package Type: SOT-23 (TO-236), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 303 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 2.5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 1.02mm, Length: 3.04mm