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Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.65

1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 12.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 72 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.49

1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 192 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.80

1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.91

1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.63

1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 1.44

1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.57

1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.80

1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 12.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 72 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.62

1

Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1

Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 103 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.70

1

Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1

Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 103 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.76

1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.76

1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 67 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.59

1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 53 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.31

1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 53 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.39

1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 192 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 1.33

1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.52

1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 67 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.47

1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 2.44

1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 1.42

1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 12.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 72 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.49

1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 255 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 1.58

1

Toshiba N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S

Toshiba N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 225 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.99

1

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W,S1VX(S

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W,S1VX(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.1mm, Length: 10.16mm

GBP 1.99

1

Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 126 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.98

1

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Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1

Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1

Toshiba N-Channel MOSFET, 43 A, 60 V, 3-Pin TO-220 TK30E06N1

Toshiba N-Channel MOSFET, 157 A, 80 V, 3-Pin TO-220 TK72E08N1

Toshiba N-Channel MOSFET, 214 A, 80 V, 3-Pin TO-220 TK100E08N1

Toshiba N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 TK40E06N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 263 A, 60 V, 3-Pin TO-220 TK100E06N1

Toshiba N-Channel MOSFET, 55 A, 80 V, 3-Pin TO-220 TK35E08N1

Toshiba N-Channel MOSFET, 207 A, 100 V, 3-Pin TO-220 TK100E10N1

Toshiba N-Channel MOSFET, 72 A, 120 V, 3-Pin TO-220 TK72E12N1,S1X(S

Toshiba N-Channel MOSFET, 15.8 A, 600 V, 3-Pin TO-220 TK16E60W,S1VX(S

Toshiba N-Channel MOSFET, 90 A, 100 V, 3-Pin TO-220 TK40E10N1,S1X(S

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