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Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-3PN TK62J60W,S1VQ(O

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-3PN TK62J60W,S1VQ(O, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20mm, Length: 15.5mm

GBP 10.26

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 10.04

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 9.76

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 10.04

1

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 10.96

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 9.08

1

Toshiba N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN TK40J60U(F)

Toshiba N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN TK40J60U(F), Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 320 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Height: 20mm, Length: 15.5mm

GBP 10.46

1

Toshiba N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 TK62N60W5,S1VF(S

Toshiba N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 TK62N60W5,S1VF(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 45 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 400 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20.95mm

GBP 9.11

1

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Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-3PN TK62J60W,S1VQ(O

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 62 A, 600 V, 3-Pin TO-247 TK62N60W,S1VF(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 40 A, 600 V, 3-Pin TO-3PN TK40J60U(F)

Toshiba N-Channel MOSFET, 61.8 A, 600 V, 3-Pin TO-247 TK62N60W5,S1VF(S

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