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Toshiba Diode, Zener, DO-15(SC-39), 1Z6.8(Q)

Toshiba Diode, Zener, DO-15(SC-39), MPN: 1Z6.8(Q)

GBP 0.42

1

Toshiba Diode, Zener, DO-15(SC-39), 1Z18A(Q)

Toshiba Diode, Zener, DO-15(SC-39), MPN: 1Z18A(Q)

GBP 0.53

1

Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10μA, 2-Pin DO-15

Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10µA, 2-Pin DO-15

GBP 0.42

1

Toshiba 2SA1362-GR,LF(T PNP Transistor, 800 mA, 15 V, 3-Pin SOT-346

Toshiba 2SA1362-GR,LF(T PNP Transistor, 800 mA, 15 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -15 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 2.9 x 1.5 x 1.1mm, Maximum Collector Emitter Saturation Voltage: -0.2 V, Maximum Operating Temperature: +150 °C

GBP 0.11

1

Toshiba 1000V 1A, Silicon Junction Diode, 2-Pin DO-15

Toshiba 1000V 1A, Silicon Junction Diode, 2-Pin DO-15, Mounting Type: Through Hole, Diode Configuration: Single, Maximum Forward Voltage Drop: 3.3V, Peak Reverse Recovery Time: 100ns, Diameter: 3.4mm, Peak Non-Repetitive Forward Surge Current: 11A, MPN: 1NU41(Q)

GBP 0.19

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 0.83

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.22

1

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole, Maximum Gate Emitter Voltage: ±25V, Maximum Power Dissipation: 30 W, Switching Speed: 100kHz, Transistor Configuration: Single, Length: 10mm, Width: 4.5mm, Height: 15mm, Dimensions: 10 x 4.5 x 15mm, Maximum Operating Temperature: +150 °C

GBP 1.04

1

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 29 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.30

1

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 29 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.35

1

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 48 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 29 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.35

1

Toshiba, 15 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L15F(F)

Toshiba, 15 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L15F(F), Line Regulation: 300 mV, Load Regulation: 150 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 3.3mA, Output Type: Fixed, Power Rating: 0.5W, Dimensions: 4.6 x 2.5 x 1.6mm, Length: 4.6mm

GBP 0.28

1

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Height: 19mm

GBP 2.40

1

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Height: 19mm

GBP 2.70

1

Toshiba 2SC5949-O(Q) NPN Transistor, 15 A, 200 V, 3-Pin TO-3PL

Toshiba 2SC5949-O(Q) NPN Transistor, 15 A, 200 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 220 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 5.2 x 26 x 20.5mm, Height: 5.2mm

GBP 3.17

1

Toshiba TTC5200(Q) NPN Transistor, 15 A, 230 V, 3-Pin 2-21F1A

Toshiba TTC5200(Q) NPN Transistor, 15 A, 230 V, 3-Pin 2-21F1A, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 20.5 x 5.2 x 26mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 2.39

1

Toshiba 2SA2121-O(Q) PNP Bipolar Transistor, 15 A, 200 V, 3-Pin TO-3PL

Toshiba 2SA2121-O(Q) PNP Bipolar Transistor, 15 A, 200 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 220 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 25 MHz, Dimensions: 26 x 20.5 x 5.2mm, Height: 26mm

GBP 3.17

1

Toshiba N-Channel MOSFET, 15 A, 600 V, 3-Pin TO-3PN TK20J60U(F)

Toshiba N-Channel MOSFET, 15 A, 600 V, 3-Pin TO-3PN TK20J60U(F), Mounting Type: Through Hole, Maximum Drain Source Resistance: 190 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 190 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 19mm, Length: 40.5mm

GBP 2.64

1

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK15J50D(F)

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK15J50D(F), Mounting Type: Through Hole, Maximum Drain Source Resistance: 400 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 19mm, Length: 40.5mm

GBP 2.45

1

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F)

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F), Mounting Type: Through Hole, Maximum Drain Source Resistance: 270 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 280 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 19mm, Length: 40.5mm

GBP 2.43

1

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 26 x 20.5 x 5.2mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 2.98

1

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Minimum DC Current Gain: 35, Transistor Configuration: Single, Maximum Collector Base Voltage: -230 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 20.5 x 5.2 x 26mm

GBP 1.90

1

Toshiba 2SA1986-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1986-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 1.41

1

Toshiba 2SC5358-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SC5358-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 19 x 15.9 x 4.8mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 1.38

1

Toshiba N-Channel MOSFET, 15 A, 60 V, 8-Pin SOP TPCA8053-H(TE12L,Q

Toshiba N-Channel MOSFET, 15 A, 60 V, 8-Pin SOP TPCA8053-H(TE12L,Q, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 22.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.3V, Maximum Power Dissipation: 2.8 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.95mm

GBP 0.60

1

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Toshiba Diode, Zener, DO-15(SC-39), 1Z6.8(Q)

Toshiba Diode, Zener, DO-15(SC-39), 1Z18A(Q)

Toshiba 1Z18, Zener Diode, 18V ±10% 1 W 10μA, 2-Pin DO-15

Toshiba 2SA1362-GR,LF(T PNP Transistor, 800 mA, 15 V, 3-Pin SOT-346

Toshiba 1000V 1A, Silicon Junction Diode, 2-Pin DO-15

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba GT15J341 IGBT, 15 A 600 V, 3-Pin TO-220SIS, Through Hole

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba P-Channel MOSFET, 15 A, 40 V, 3-Pin DPAK TJ15P04M3

Toshiba, 15 V Linear Voltage Regulator, 150mA, 1-Channel 4-Pin, HSOP TA78L15F(F)

Toshiba 2SC5242-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SA1962-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SC5949-O(Q) NPN Transistor, 15 A, 200 V, 3-Pin TO-3PL

Toshiba TTC5200(Q) NPN Transistor, 15 A, 230 V, 3-Pin 2-21F1A

Toshiba 2SA2121-O(Q) PNP Bipolar Transistor, 15 A, 200 V, 3-Pin TO-3PL

Toshiba N-Channel MOSFET, 15 A, 600 V, 3-Pin TO-3PN TK20J60U(F)

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK15J50D(F)

Toshiba N-Channel MOSFET, 15 A, 500 V, 3-Pin TO-3PN TK20J50D(F)

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1943-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1986-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba 2SC5358-O(Q) NPN Transistor, 15 A, 230 V, 3-Pin TO-3PN

Toshiba N-Channel MOSFET, 15 A, 60 V, 8-Pin SOP TPCA8053-H(TE12L,Q

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