Pro1.pl | See the cheapest prices and offers on !URL

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

GBP 1.24

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

GBP 1.28

1

Toshiba 2SA1162-Y(F) PNP Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SA1162-Y(F) PNP Transistor, 150 mA, 50 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 1.1 x 2.9 x 1.5mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.03

1

Toshiba 2SA1162-GR(F) PNP Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SA1162-GR(F) PNP Transistor, 150 mA, 50 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 1.1 x 2.9 x 1.5mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.03

1

Toshiba 2SC2712-GR(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SC2712-GR(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 1.1 x 2.9 x 1.5mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.04

1

Toshiba 2SC2712-BL(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SC2712-BL(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 1.1 x 2.9 x 1.5mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.04

1

Toshiba 2SC2712-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SC2712-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346, Package Type: SOT-346 (SC-59), Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 1.1 x 2.9 x 1.5mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.03

1

Toshiba 2SC2712-Y,LF(T NPN Transistor, 150 mA, 50 V, 3-Pin TO-236MOD

Toshiba 2SC2712-Y,LF(T NPN Transistor, 150 mA, 50 V, 3-Pin TO-236MOD, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 2.9 x 1.5 x 1.1mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.04

1

Toshiba 2SA1162-GR,LF(T PNP Transistor, 150 mA, 50 V, 3-Pin TO-236MOD

Toshiba 2SA1162-GR,LF(T PNP Transistor, 150 mA, 50 V, 3-Pin TO-236MOD, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 2.9 x 1.5 x 1.1mm, Maximum Collector Emitter Saturation Voltage: -0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.04

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M, Maximum Drain Source Resistance: 2.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V

GBP 1.04

1

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M, Maximum Drain Source Resistance: 2.4 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.4V

GBP 1.64

1

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M, Maximum Drain Source Resistance: 0.89 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V

GBP 1.59

1

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M, Maximum Drain Source Resistance: 0.89 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V

GBP 1.01

1

Toshiba PNP Bipolar Transistor, 150 mA, 50 V, 3-Pin TO-92

Toshiba PNP Bipolar Transistor, 150 mA, 50 V, 3-Pin TO-92, Mounting Type: Through Hole, Maximum Power Dissipation: 400 mW, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Dimensions: 5.1 x 4.1 x 4.7mm, MPN: 2SA1015(F)

GBP 0.09

1

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 132 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.46

1

Toshiba N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP TPH3300CNH

Toshiba N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP TPH3300CNH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.42

1

Toshiba N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP TPH3300CNH

Toshiba N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP TPH3300CNH, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 33 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 57 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.42

1

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.1 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.4V, Minimum Gate Threshold Voltage: 1.4V, Maximum Power Dissipation: 132 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.46

1

Toshiba 2SA1586-Y(F) PNP Transistor, 150 mA, 50 V, 3-Pin USM

Toshiba 2SA1586-Y(F) PNP Transistor, 150 mA, 50 V, 3-Pin USM, Mounting Type: Surface Mount, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 0.9 x 2 x 1.25mm, Maximum Collector Emitter Saturation Voltage: 0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.04

1

Toshiba 2SC4116-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin USM

Toshiba 2SC4116-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin USM, Mounting Type: Surface Mount, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 0.9 x 2 x 1.25mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.03

1

Toshiba 2SC4944-GR(TE85L,F NPN Transistor, 150 mA, 50 V, 5-Pin USV

Toshiba 2SC4944-GR(TE85L,F NPN Transistor, 150 mA, 50 V, 5-Pin USV, Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Dimensions: 2 x 1.25 x 0.9mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.19

1

Toshiba 2SC4738-GR,LF(T NPN Transistor, 150 mA, 50 V, 3-Pin 2-2H1A

Toshiba 2SC4738-GR,LF(T NPN Transistor, 150 mA, 50 V, 3-Pin 2-2H1A, Mounting Type: Surface Mount, Maximum Power Dissipation: 100 mW, Transistor Configuration: Single, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 1.6 x 0.8 x 0.7mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.07

1

Toshiba HN1C01FU-GR,LF(T Dual NPN Transistor, 150 mA, 50 V, 6-Pin SOT-363

Toshiba HN1C01FU-GR,LF(T Dual NPN Transistor, 150 mA, 50 V, 6-Pin SOT-363, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Maximum Collector Base Voltage: 60 V, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 2 x 1.25 x 0.9mm, Maximum Collector Emitter Saturation Voltage: 0.25 V, Maximum Operating Temperature: +125 °C

GBP 0.07

1

Toshiba HN1A01FU-GR,LF(T Dual PNP Transistor, 150 mA, 50 V, 6-Pin SOT-363

Toshiba HN1A01FU-GR,LF(T Dual PNP Transistor, 150 mA, 50 V, 6-Pin SOT-363, Package Type: SOT-363 (SC-88), Mounting Type: Surface Mount, Maximum Power Dissipation: 200 mW, Maximum Collector Base Voltage: -50 V, Maximum Emitter Base Voltage: -5 V, Maximum Operating Frequency: 80 MHz, Dimensions: 2 x 1.25 x 0.9mm, Maximum Collector Emitter Saturation Voltage: -0.3 V, Maximum Operating Temperature: +125 °C

GBP 0.07

1

Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P

Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 15.5 x 4.5 x 20mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 1.79

1

Brand

Gender

Merchant

Price (EUR)

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba 2SA1162-Y(F) PNP Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SA1162-GR(F) PNP Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SC2712-GR(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SC2712-BL(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SC2712-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin SOT-346

Toshiba 2SC2712-Y,LF(T NPN Transistor, 150 mA, 50 V, 3-Pin TO-236MOD

Toshiba 2SA1162-GR,LF(T PNP Transistor, 150 mA, 50 V, 3-Pin TO-236MOD

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPHR8504PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba Silicon N-Channel MOSFET, 150 A, 30 V, 8-Pin SOP TPHR6503PL,L1Q(M

Toshiba PNP Bipolar Transistor, 150 mA, 50 V, 3-Pin TO-92

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL

Toshiba N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP TPH3300CNH

Toshiba N-Channel MOSFET, 29 A, 150 V, 8-Pin SOP TPH3300CNH

Toshiba N-Channel MOSFET, 150 A, 40 V, 8-Pin SOP TPH1R204PL

Toshiba 2SA1586-Y(F) PNP Transistor, 150 mA, 50 V, 3-Pin USM

Toshiba 2SC4116-Y(F) NPN Transistor, 150 mA, 50 V, 3-Pin USM

Toshiba 2SC4944-GR(TE85L,F NPN Transistor, 150 mA, 50 V, 5-Pin USV

Toshiba 2SC4738-GR,LF(T NPN Transistor, 150 mA, 50 V, 3-Pin 2-2H1A

Toshiba HN1C01FU-GR,LF(T Dual NPN Transistor, 150 mA, 50 V, 6-Pin SOT-363

Toshiba HN1A01FU-GR,LF(T Dual PNP Transistor, 150 mA, 50 V, 6-Pin SOT-363

Toshiba 2SC5200N(S1,E,S) NPN Transistor, 15 A, 230 V, 3-Pin TO-3P

Powered by Cobiro