Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1 Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 103 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm GBP 0.70 1
Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1 Toshiba N-Channel MOSFET, 80 A, 80 V, 3-Pin TO-220 TK46E08N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 8.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 103 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm GBP 0.76 1
