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Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP

Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP, Switch On Resistance: 0.9Ω, Voltage: 3 → 7V, Power Rating: 2W, Mounting Type: Surface Mount, Dimensions: 5.5 x 4.4 x 1.4mm, Length: 5.5mm, Width: 4.4mm, Maximum Operating Temperature: +110 °C, Minimum Operating Temperature: -40 °C

GBP 1.30

1

Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP

Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP, Switch On Resistance: 0.9Ω, Maximum Operating Supply Voltage: 7 V, Power Rating: 2W, Mounting Type: Surface Mount, Maximum Operating Temperature: +110 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5.5 x 4.4 x 1.4mm

GBP 0.54

1

Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP

Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP, Switch On Resistance: 0.9Ω, Maximum Operating Supply Voltage: 7 V, Power Rating: 2W, Mounting Type: Surface Mount, Maximum Operating Temperature: +110 °C, Minimum Operating Temperature: -40 °C, Dimensions: 5.5 x 4.4 x 1.4mm

GBP 1.30

1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.63

1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1, Mounting Type: Through Hole, Maximum Drain Source Resistance: 5.4 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.1mm, Length: 10.16mm

GBP 0.80

1

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.1mm, Length: 10.16mm

GBP 0.91

1

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.1mm, Length: 10.16mm

GBP 1.18

1

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15.1mm, Length: 10.16mm

GBP 0.95

1

Toshiba N-Channel MOSFET, 27 A, 650 V, 3-Pin TO-247 TK28N65W,S1F(S

Toshiba N-Channel MOSFET, 27 A, 650 V, 3-Pin TO-247 TK28N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20.95mm

GBP 2.11

1

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-3P TK12J60W,S1VQ(O

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-3P TK12J60W,S1VQ(O, Mounting Type: Through Hole, Maximum Drain Source Resistance: 300 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.7V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20mm

GBP 1.50

1

Toshiba TC74HC132AP(F), Quad 2-Input NANDSchmitt Trigger Logic Gate, 14-Pin PDIP

Toshiba TC74HC132AP(F), Quad 2-Input NANDSchmitt Trigger Logic Gate, 14-Pin PDIP, Mounting Type: Through Hole, Schmitt Trigger Input: Yes, Maximum Operating Supply Voltage: 6 V, Maximum High Level Output Current: -5.2mA, Maximum Propagation Delay Time @ Maximum CL: 110 ns @ 2 V, 19 ns @ 6 V, 22 ns @ 4.5 V, Dimensions: 19.25 x 6.4 x 3.5mm

GBP 0.49

1

Toshiba N-Channel MOSFET, 27.6 A, 650 V, 3-Pin TO-220 TK28E65W,S1X(S

Toshiba N-Channel MOSFET, 27.6 A, 650 V, 3-Pin TO-220 TK28E65W,S1X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 230 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15.1mm

GBP 1.98

1

Toshiba TC74HC132AF(F), Quad 2-Input NANDSchmitt Trigger Logic Gate, 14-Pin SOP

Toshiba TC74HC132AF(F), Quad 2-Input NANDSchmitt Trigger Logic Gate, 14-Pin SOP, Mounting Type: Surface Mount, Schmitt Trigger Input: Yes, Maximum Operating Supply Voltage: 6 V, Maximum High Level Output Current: -5.2mA, Maximum Propagation Delay Time @ Maximum CL: 110 ns @ 2 V, 19 ns @ 6 V, 22 ns @ 4.5 V, Dimensions: 10.3 x 5.3 x 1.5mm

GBP 0.63

1

Toshiba TC4069UBF(EL,N,F) Hex Inverter, 14-Pin SOP

Toshiba TC4069UBF(EL,N,F) Hex Inverter, 14-Pin SOP, Input Type: CMOS, Output Type: Inverting, Maximum Propagation Delay Time @ Maximum CL: 110 ns @ 50 pF, Maximum High Level Output Current: -9mA, Maximum Low Level Output Current: 12mA, Mounting Type: Surface Mount, Dimensions: 10.8 x 5.3 x 1.5mm, Length: 10.8mm, Maximum Operating Supply Voltage: 18 V

GBP 0.41

1

Toshiba TC4069UBP(N,F) Hex Inverter, 14-Pin PDIP

Toshiba TC4069UBP(N,F) Hex Inverter, 14-Pin PDIP, Schmitt Trigger Input: No, Maximum Propagation Delay Time @ Maximum CL: 110 ns @ 5 V, 50 ns @ 15 V, 60 ns @ 10 V, Maximum High Level Output Current: -4mA, Mounting Type: Through Hole, Logic Family: 4000, Dimensions: 19.25 x 6.4 x 3.5mm, Length: 19.25mm, Maximum Operating Supply Voltage: 18 V, Maximum Operating Temperature: +85 °C

GBP 0.24

1

Toshiba TC4069UBFT(N) Hex Inverter, 14-Pin TSSOP

Toshiba TC4069UBFT(N) Hex Inverter, 14-Pin TSSOP, Schmitt Trigger Input: No, Maximum Propagation Delay Time @ Maximum CL: 110 ns @ 5 V, 50 ns @ 15 V, 60 ns @ 10 V, Maximum High Level Output Current: -9mA, Maximum Low Level Output Current: 12mA, Mounting Type: Surface Mount, Logic Family: 4000, Dimensions: 5 x 4.4 x 1mm, Length: 5mm, Maximum Operating Supply Voltage: 18 V, Maximum Operating Temperature: +85 °C

GBP 0.36

1

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Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP

Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP

Toshiba TPD1030F(TE12L,Q)Low Side, Low Side Switch Power Switch IC 8-Pin, SOP

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 105 A, 60 V, 3-Pin TO-220 TK58E06N1

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-220 TK12E60W,S1VX(S

Toshiba N-Channel MOSFET, 27 A, 650 V, 3-Pin TO-247 TK28N65W,S1F(S

Toshiba N-Channel MOSFET, 11.5 A, 600 V, 3-Pin TO-3P TK12J60W,S1VQ(O

Toshiba TC74HC132AP(F), Quad 2-Input NANDSchmitt Trigger Logic Gate, 14-Pin PDIP

Toshiba N-Channel MOSFET, 27.6 A, 650 V, 3-Pin TO-220 TK28E65W,S1X(S

Toshiba TC74HC132AF(F), Quad 2-Input NANDSchmitt Trigger Logic Gate, 14-Pin SOP

Toshiba TC4069UBF(EL,N,F) Hex Inverter, 14-Pin SOP

Toshiba TC4069UBP(N,F) Hex Inverter, 14-Pin PDIP

Toshiba TC4069UBFT(N) Hex Inverter, 14-Pin TSSOP

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