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Toshiba N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3)

Toshiba N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.5mm, Length: 1.2mm

GBP 0.17

1

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 150 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.55mm, Length: 1.2mm

GBP 0.04

1

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 150 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.55mm, Length: 1.2mm

GBP 0.04

1

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Minimum Gate Threshold Voltage: 0.4V, Maximum Power Dissipation: 150 mW, Maximum Gate Source Voltage: ±10 V, Height: 0.55mm, Length: 1.2mm

GBP 0.04

1

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US SSM6N35FU(TE85L,F)

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US SSM6N35FU(TE85L,F), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.9mm, Length: 1.25mm

GBP 0.14

1

Toshiba Dual N/P-Channel MOSFET, 180 mA, 20 V, 6-Pin US SSM6L35FU(TE85L,F)

Toshiba Dual N/P-Channel MOSFET, 180 mA, 20 V, 6-Pin US SSM6L35FU(TE85L,F), Channel Type: N, P, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 20 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Isolated, Maximum Gate Source Voltage: -10 V, +10 V, Height: 0.9mm, Length: 1.25mm

GBP 0.27

1

Toshiba TC7MB3257FK, Multiplexer Quad 2:1, 16-Pin VSSOP

Toshiba TC7MB3257FK, Multiplexer Quad 2:1, 16-Pin VSSOP, Mounting Type: Surface Mount, Dimensions: 4 x 3 x 0.8mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 4mm, Maximum Power Dissipation: 180 mW, Width: 3mm

GBP 1.16

1

Toshiba TC7MB3253FK, Multiplexer Dual 4:1, 16-Pin VSSOP

Toshiba TC7MB3253FK, Multiplexer Dual 4:1, 16-Pin VSSOP, Mounting Type: Surface Mount, Dimensions: 4 x 3 x 0.8mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 4mm, Maximum Power Dissipation: 180 mW, Width: 3mm

GBP 1.16

1

Toshiba TC74HC151AF(F) Multiplexer Single 8:1, 16-Pin SOP

Toshiba TC74HC151AF(F) Multiplexer Single 8:1, 16-Pin SOP, Mounting Type: Surface Mount, Dimensions: 10.3 x 5.3 x 1.5mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 10.3mm, Maximum Power Dissipation: 180 mW, Width: 5.3mm

GBP 0.39

1

Toshiba TC74HC153AF(F) Multiplexer Dual 4:1, 16-Pin SOP

Toshiba TC74HC153AF(F) Multiplexer Dual 4:1, 16-Pin SOP, Mounting Type: Surface Mount, Dimensions: 10.8 x 5.3 x 1.5mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 10.8mm, Maximum Power Dissipation: 180 mW, Width: 5.3mm

GBP 0.39

1

Toshiba TC74HC157AF(F) Multiplexer Quad 2:1, 16-Pin SOP

Toshiba TC74HC157AF(F) Multiplexer Quad 2:1, 16-Pin SOP, Mounting Type: Surface Mount, Dimensions: 10.3 x 5.3 x 1.5mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 10.3mm, Maximum Power Dissipation: 180 mW, Width: 5.3mm

GBP 0.35

1

Toshiba TC74VHC157FK(EL,K) Multiplexer Quad 2:1, 16-Pin VSSOP

Toshiba TC74VHC157FK(EL,K) Multiplexer Quad 2:1, 16-Pin VSSOP, Mounting Type: Surface Mount, Dimensions: 4 x 3 x 0.8mm, Maximum Operating Temperature: +85 °C, Minimum Operating Temperature: -40 °C, Length: 4mm, Maximum Power Dissipation: 180 mW, Width: 3mm

GBP 0.46

1

Toshiba N-Channel MOSFET, 25 A, 600 V, 4-Pin TO-247 TK25Z60X,S1F(S

Toshiba N-Channel MOSFET, 25 A, 600 V, 4-Pin TO-247 TK25Z60X,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Power Dissipation: 180 W, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm, Maximum Operating Temperature: +150 °C, Series: DTMOSIV-H

GBP 1.87

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.14

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 1.15

1

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 4.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Automotive Standard: AEC-Q101

GBP 0.98

1

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL, Mounting Type: Through Hole, Maximum Power Dissipation: 180 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Maximum Operating Frequency: 30 MHz, Dimensions: 26 x 20.5 x 5.2mm, Maximum Collector Emitter Saturation Voltage: 3 V, Maximum Operating Temperature: +150 °C

GBP 2.98

1

Toshiba N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220 TK25E60X,S1X(S

Toshiba N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220 TK25E60X,S1X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15.1mm

GBP 1.50

1

Toshiba N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-247 TK25N60X,S1F(S

Toshiba N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-247 TK25N60X,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 125 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 180 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20.95mm

GBP 2.31

1

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Toshiba N-Channel MOSFET, 180 mA, 20 V, 3-Pin VESM SSM3K35MFV(TPL3)

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin SOT-563 SSM6N35FE

Toshiba Dual N-Channel MOSFET, 180 mA, 20 V, 6-Pin US SSM6N35FU(TE85L,F)

Toshiba Dual N/P-Channel MOSFET, 180 mA, 20 V, 6-Pin US SSM6L35FU(TE85L,F)

Toshiba TC7MB3257FK, Multiplexer Quad 2:1, 16-Pin VSSOP

Toshiba TC7MB3253FK, Multiplexer Dual 4:1, 16-Pin VSSOP

Toshiba TC74HC151AF(F) Multiplexer Single 8:1, 16-Pin SOP

Toshiba TC74HC153AF(F) Multiplexer Dual 4:1, 16-Pin SOP

Toshiba TC74HC157AF(F) Multiplexer Quad 2:1, 16-Pin SOP

Toshiba TC74VHC157FK(EL,K) Multiplexer Quad 2:1, 16-Pin VSSOP

Toshiba N-Channel MOSFET, 25 A, 600 V, 4-Pin TO-247 TK25Z60X,S1F(S

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba N-Channel MOSFET, 100 A, 40 V, 3-Pin DPAK TK100S04N1L

Toshiba 2SA1987-O(Q) PNP Transistor, 15 A, 230 V, 3-Pin TO-3PL

Toshiba N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-220 TK25E60X,S1X(S

Toshiba N-Channel MOSFET, 25 A, 600 V, 3-Pin TO-247 TK25N60X,S1F(S

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