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Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

GBP 3.76

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 5.63

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 5.85

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 4.83

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 3.07

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 4.76

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Number of Elements per Chip: 1

GBP 4.58

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 9.89

1

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O, Maximum Drain Source Resistance: 0.09 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V

GBP 10.27

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 9.08

1

Toshiba N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 TK35N65W,S1F(S

Toshiba N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 TK35N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 80 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 270 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 3.12

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 10.04

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 9.76

1

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 400 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.95mm, Length: 15.94mm

GBP 10.04

1

Toshiba N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-247 TK17N65W,S1F(S

Toshiba N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-247 TK17N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 200 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20.95mm

GBP 1.34

1

Toshiba N-Channel MOSFET, 27 A, 650 V, 3-Pin TO-247 TK28N65W,S1F(S

Toshiba N-Channel MOSFET, 27 A, 650 V, 3-Pin TO-247 TK28N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 230 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20.95mm

GBP 2.11

1

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin TO-220SIS TK11A65W,S5X(M

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin TO-220SIS TK11A65W,S5X(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 390 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 35 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 0.94

1

Toshiba N-Channel MOSFET, 13.7 A, 650 V, 3-Pin TO-247 TK14N65W,S1F(S

Toshiba N-Channel MOSFET, 13.7 A, 650 V, 3-Pin TO-247 TK14N65W,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20.95mm

GBP 1.21

1

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin IPAK TK11Q65W,S1Q(S

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin IPAK TK11Q65W,S1Q(S, Package Type: IPAK (TO-251), Mounting Type: Through Hole, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 100 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 7.12mm

GBP 0.76

1

Toshiba N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

Toshiba N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 250 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 130 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V

GBP 1.14

1

Toshiba N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK TK6P65W,RQ(S

Toshiba N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK TK6P65W,RQ(S, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 1.05 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V

GBP 0.45

1

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK TK11P65W,RQ(S

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK TK11P65W,RQ(S, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 440 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 100 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V

GBP 1.00

1

Toshiba N-Channel MOSFET, 27.6 A, 650 V, 3-Pin TO-220 TK28E65W,S1X(S

Toshiba N-Channel MOSFET, 27.6 A, 650 V, 3-Pin TO-220 TK28E65W,S1X(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 230 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15.1mm

GBP 1.98

1

Toshiba N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 TK35N65W5,S1F(S

Toshiba N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 TK35N65W5,S1F(S, Mounting Type: Through Hole, Maximum Drain Source Resistance: 95 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 270 W, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 20.95mm

GBP 3.56

1

Toshiba N-Channel MOSFET, 9.3 A, 650 V, 3-Pin TO-220SIS TK9A65W,S5X(M

Toshiba N-Channel MOSFET, 9.3 A, 650 V, 3-Pin TO-220SIS TK9A65W,S5X(M, Mounting Type: Through Hole, Maximum Drain Source Resistance: 500 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 3.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 30 W, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 0.94

1

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Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-247 TK090N65Z,S1F(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 5-Pin DFN8x8 TK099V65Z,LQ(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 3-Pin TO-220SIS TK090A65Z,S4X(S

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba Silicon N-Channel MOSFET, 30 A, 650 V, 4-Pin TO-247-4L(T TK090Z65Z,S1F(O

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 TK35N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 49 A, 650 V, 3-Pin TO-247 TK49N65W,S1F(S

Toshiba N-Channel MOSFET, 17 A, 650 V, 3-Pin TO-247 TK17N65W,S1F(S

Toshiba N-Channel MOSFET, 27 A, 650 V, 3-Pin TO-247 TK28N65W,S1F(S

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin TO-220SIS TK11A65W,S5X(M

Toshiba N-Channel MOSFET, 13.7 A, 650 V, 3-Pin TO-247 TK14N65W,S1F(S

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin IPAK TK11Q65W,S1Q(S

Toshiba N-Channel MOSFET, 13.7 A, 650 V, 3-Pin D2PAK TK14G65W,RQ(S

Toshiba N-Channel MOSFET, 5.8 A, 650 V, 3-Pin DPAK TK6P65W,RQ(S

Toshiba N-Channel MOSFET, 11.1 A, 650 V, 3-Pin DPAK TK11P65W,RQ(S

Toshiba N-Channel MOSFET, 27.6 A, 650 V, 3-Pin TO-220 TK28E65W,S1X(S

Toshiba N-Channel MOSFET, 35 A, 650 V, 3-Pin TO-247 TK35N65W5,S1F(S

Toshiba N-Channel MOSFET, 9.3 A, 650 V, 3-Pin TO-220SIS TK9A65W,S5X(M

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