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Toshiba Diode, Zener, DO-15(SC-39), 1Z6.8(Q)

Toshiba Diode, Zener, DO-15(SC-39), MPN: 1Z6.8(Q)

GBP 0.42

1

Toshiba Diode, Zener, DO-15(SC-39), 1Z18A(Q)

Toshiba Diode, Zener, DO-15(SC-39), MPN: 1Z18A(Q)

GBP 0.53

1

Toshiba 45V 100mA, Dual Schottky Diode, 4-Pin SC-61 1SS319(F)

Toshiba 45V 100mA, Dual Schottky Diode, 4-Pin SC-61 1SS319(F), Mounting Type: Surface Mount, Diode Configuration: Isolated, Number of Elements per Chip: 2

GBP 0.15

1

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS190(F)

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS190(F), Diode Configuration: Single, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Length: 2.9mm, Width: 1.5mm, Height: 1.1mm, Dimensions: 1.1 x 2.9 x 1.5mm

GBP 0.08

1

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS196(F)

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS196(F), Diode Configuration: Single, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Length: 2.9mm, Width: 1.5mm, Height: 1.1mm, Dimensions: 1.1 x 2.9 x 1.5mm

GBP 0.08

1

Toshiba Diode, 3-Pin SOT-346 (SC-59) 1SS193(TE85L,F)

Toshiba Diode, 3-Pin SOT-346 (SC-59) 1SS193(TE85L,F), Diode Configuration: Single, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Length: 2.9mm, Width: 1.5mm, Height: 1.1mm, Dimensions: 1.1 x 2.9 x 1.5mm

GBP 0.05

1

Toshiba 85V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS272(F)

Toshiba 85V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS272(F), Mounting Type: Surface Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.2V, Peak Reverse Recovery Time: 4ns, Peak Non-Repetitive Forward Surge Current: 2A

GBP 0.08

1

Toshiba 250V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS306(TE85L,F)

Toshiba 250V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS306(TE85L,F), Mounting Type: Surface Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.2V, Peak Reverse Recovery Time: 60ns, Peak Non-Repetitive Forward Surge Current: 2A

GBP 0.22

1

Toshiba 420V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS399(TE85L,F)

Toshiba 420V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS399(TE85L,F), Mounting Type: Surface Mount, Diode Configuration: Isolated, Rectifier Type: Switching, Maximum Forward Voltage Drop: 1.3V, Peak Reverse Recovery Time: 500ns, Peak Non-Repetitive Forward Surge Current: 2A

GBP 0.17

1

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS193(TE85L,F)

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS193(TE85L,F), Diode Configuration: Single, Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Length: 2.9mm, Width: 1.5mm, Height: 1.1mm, Dimensions: 1.1 x 2.9 x 1.5mm, MPN: 1SS193(F)

GBP 0.05

1

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS226(F)

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS226(F), Mounting Type: Surface Mount, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Length: 2.9mm, Width: 1.5mm, Height: 1.1mm, Dimensions: 1.1 x 2.9 x 1.5mm

GBP 0.05

1

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS398(F)

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS398(F), Mounting Type: Surface Mount, Number of Elements per Chip: 2, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.3V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Length: 2.9mm, Width: 1.5mm, Height: 1.1mm, Dimensions: 1.1 x 2.9 x 1.5mm

GBP 0.23

1

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS379(F)

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS379(F), Mounting Type: Surface Mount, Number of Elements per Chip: 2, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.3V, Minimum Operating Temperature: -55 °C, Maximum Operating Temperature: +125 °C, Length: 2.9mm, Width: 1.5mm, Height: 1.1mm, Dimensions: 1.1 x 2.9 x 1.5mm

GBP 0.18

1

Toshiba 11V Zener Diode ±2.5% 200 mW SMT 3-Pin SOT-346 (SC-59)

Toshiba 11V Zener Diode ±2.5% 200 mW SMT 3-Pin SOT-346 (SC-59), Diode Configuration: Single, Mounting Type: Surface Mount, Zener Type: Voltage Regulator, Test Current: 5mA, Maximum Zener Impedance: 15Ω, Maximum Reverse Leakage Current: 500nA, Dimensions: 2.9 x 1.5 x 1.1mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C, MPN: 02CZ11-X

GBP 0.08

1

Toshiba N-Channel MOSFET, 6 A, 600 V, 3-Pin SC-67 TK6A60D,S5Q(J

Toshiba N-Channel MOSFET, 6 A, 600 V, 3-Pin SC-67 TK6A60D,S5Q(J, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.25 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 15mm, Length: 10mm

GBP 0.94

1

Toshiba N-Channel MOSFET, 6 A, 800 V, 3-Pin SC-67 2SK4013,S5Q(J

Toshiba N-Channel MOSFET, 6 A, 800 V, 3-Pin SC-67 2SK4013,S5Q(J, Mounting Type: Through Hole, Maximum Drain Source Resistance: 1.7 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 1.36

1

Toshiba N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J

Toshiba N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J, Mounting Type: Through Hole, Maximum Drain Source Resistance: 4.3 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 40 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.9V, Height: 15mm

GBP 1.04

1

Toshiba N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J

Toshiba N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.5 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.7V, Height: 15mm

GBP 1.44

1

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SC-70 (USM) SSM3K15AFU,LF(T

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SC-70 (USM) SSM3K15AFU,LF(T, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.6 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Minimum Gate Threshold Voltage: 0.8V, Maximum Power Dissipation: 150 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: ±20 V, Forward Diode Voltage: 1.2V

GBP 0.07

1

Toshiba Dual Switching Diode, Common Anode, 300mA 80V, 3-Pin SOT-346 (SC-59) 1SS181,LF(T

Toshiba Dual Switching Diode, Common Anode, 300mA 80V, 3-Pin SOT-346 (SC-59) 1SS181,LF(T, Mounting Type: Surface Mount, Number of Elements per Chip: 2, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Maximum Diode Capacitance: 4pF, Length: 2.9mm, Width: 1.5mm, Height: 1.16mm, Dimensions: 2.9 x 1.5 x 1.16mm, Power Dissipation: 150mW

GBP 0.05

1

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59), Maximum Gate Source Voltage: -30 V, Maximum Drain Gate Voltage: -50V, Configuration: Single, Mounting Type: Surface Mount, Dimensions: 2.9 x 1.5 x 1.1mm, Length: 2.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -55 °C

GBP 0.29

1

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59), Maximum Gate Source Voltage: -30 V, Maximum Drain Gate Voltage: -50V, Configuration: Single, Mounting Type: Surface Mount, Dimensions: 2.9 x 1.5 x 1.1mm, Length: 2.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -55 °C

GBP 0.30

1

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59), Idss Drain-Source Cut-off Current: 0.3 → 0.75mA, Maximum Gate Source Voltage: -30 V, Maximum Drain Gate Voltage: -50V, Configuration: Single, Mounting Type: Surface Mount, Dimensions: 2.9 x 1.5 x 1.1mm, Length: 2.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -55 °C

GBP 0.20

1

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59), Idss Drain-Source Cut-off Current: 1.2 → 3.0mA, Maximum Gate Source Voltage: -30 V, Maximum Drain Gate Voltage: -50V, Configuration: Single, Mounting Type: Surface Mount, Dimensions: 2.9 x 1.5 x 1.1mm, Length: 2.9mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -55 °C

GBP 0.19

1

Toshiba 45V 100mA, Schottky Diode, 3-Pin SOT-346 1SS294(F)

Toshiba 45V 100mA, Schottky Diode, 3-Pin SOT-346 1SS294(F), Mounting Type: Surface Mount, Package Type: SOT-346 (SC-59), Diode Configuration: Single

GBP 0.08

1

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Toshiba Diode, Zener, DO-15(SC-39), 1Z6.8(Q)

Toshiba Diode, Zener, DO-15(SC-39), 1Z18A(Q)

Toshiba 45V 100mA, Dual Schottky Diode, 4-Pin SC-61 1SS319(F)

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS190(F)

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS196(F)

Toshiba Diode, 3-Pin SOT-346 (SC-59) 1SS193(TE85L,F)

Toshiba 85V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS272(F)

Toshiba 250V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS306(TE85L,F)

Toshiba 420V 100mA, Dual Silicon Junction Diode, 4-Pin SC-61 1SS399(TE85L,F)

Toshiba Switching Diode, 3-Pin SOT-346 (SC-59) 1SS193(TE85L,F)

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS226(F)

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS398(F)

Toshiba Dual Switching Diode, Series, 3-Pin SOT-346 (SC-59) 1SS379(F)

Toshiba 11V Zener Diode ±2.5% 200 mW SMT 3-Pin SOT-346 (SC-59)

Toshiba N-Channel MOSFET, 6 A, 600 V, 3-Pin SC-67 TK6A60D,S5Q(J

Toshiba N-Channel MOSFET, 6 A, 800 V, 3-Pin SC-67 2SK4013,S5Q(J

Toshiba N-Channel MOSFET, 3 A, 900 V, 3-Pin SC-67 2SK3564,S5Q(J

Toshiba N-Channel MOSFET, 5 A, 900 V, 3-Pin SC-67 2SK3565,S5Q(J

Toshiba N-Channel MOSFET, 100 mA, 30 V, 3-Pin SC-70 (USM) SSM3K15AFU,LF(T

Toshiba Dual Switching Diode, Common Anode, 300mA 80V, 3-Pin SOT-346 (SC-59) 1SS181,LF(T

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK208-R(TE85L,F) N-Channel JFET, 10 V, Idss 0.3 to 0.75mA, 3-Pin SOT-346 (SC-59)

Toshiba 2SK209-Y(TE85L,F) N-Channel JFET, 10 V, Idss 1.2 to 3.0mA, 3-Pin SOT-346 (SC-59)

Toshiba 45V 100mA, Schottky Diode, 3-Pin SOT-346 1SS294(F)

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