Taiwan Semiconductor N-Channel MOSFET, 10 A, 650 V, 3-Pin ITO-220 Taiwan Semi TSM10NC60CF C0G
Taiwan Semiconductor N-Channel MOSFET, 10 A, 650 V, 3-Pin ITO-220 Taiwan Semi TSM10NC60CF C0G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 750 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 45 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.4V