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STMicroelectronics Evaluation Platform Based on the BlueNRG-2 STEVAL-IDB008V2 Bluetooth Evaluation Kit for BlueNRG-2

STMicroelectronics Evaluation Platform Based on the BlueNRG-2 STEVAL-IDB008V2 Bluetooth Evaluation Kit for BlueNRG-2, Technology: USB, Frequency: 8MHz

GBP 57.24

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STMicroelectronics DB4 DIAC 45V, 2A, 2-Pin DO-35

STMicroelectronics DB4 DIAC 45V, 2A, 2-Pin DO-35, Mounting Type: Through Hole, Dimensions: 2 (Dia) x 4.5mm, Width: 2 (Dia.)mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 0.29

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STMicroelectronics DB4 DIAC 45V, 2A, 2-Pin DO-35

STMicroelectronics DB4 DIAC 45V, 2A, 2-Pin DO-35, Mounting Type: Through Hole, Dimensions: 2 (Dia) x 4.5mm, Width: 2 (Dia.)mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 0.10

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STMicroelectronics DB4 DIAC 45V, 2A, 2-Pin DO-35

STMicroelectronics DB4 DIAC 45V, 2A, 2-Pin DO-35, Mounting Type: Through Hole, Dimensions: 2 (Dia) x 4.5mm, Width: 2 (Dia.)mm, Maximum Operating Temperature: +125 °C, Minimum Operating Temperature: -40 °C

GBP 0.17

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STMicroelectronics, 2-Channel37W, 15-Pin MULTIWATT TDA7376B

GBP 4.95

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STMicroelectronics, 2-Channel37W, 15-Pin MULTIWATT TDA7376B

STMicroelectronics, 2-Channel37W, 15-Pin MULTIWATT TDA7376B, Amplifier Type: Power Amplifier, Output Type: 2 Channel Stereo, Application: Speaker, Amplifier Class: Class A-B, Mounting Type: Through Hole, Typical Single Supply Voltage: 18 V, Typical Gain Bandwidth Product: 0.075MHz

GBP 5.26

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STMicroelectronics N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2

STMicroelectronics N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 140 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 4.8mm

GBP 4.27

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STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin H2PAK-2 STH80N10F7-2

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin H2PAK-2 STH80N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 1.46

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STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 1.80

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STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 2.90

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STMicroelectronics N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2

STMicroelectronics N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 140 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 4.8mm

GBP 4.54

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STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 3.08

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STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin H2PAK-2 STH80N10F7-2

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin H2PAK-2 STH80N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 0.61

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STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin H2PAK-2 STH80N10F7-2

STMicroelectronics N-Channel MOSFET, 80 A, 100 V, 3-Pin H2PAK-2 STH80N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 0.60

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STMicroelectronics N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2

STMicroelectronics N-Channel MOSFET, 2.5 A, 1500 V, 3-Pin H2PAK-2 STH3N150-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 9 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 140 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 4.8mm

GBP 2.17

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