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STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +15 V, Height: 4.6mm, Length: 10.4mm

GBP 1.21

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +15 V, Height: 4.6mm, Length: 10.4mm

GBP 1.42

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +15 V, Height: 4.6mm, Length: 10.4mm

GBP 0.65

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.4mm

GBP 0.66

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.4mm

GBP 1.26

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 2.4mm

GBP 1.47

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +15 V, Height: 9.15mm, Length: 10.4mm

GBP 1.60

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +15 V, Height: 9.15mm, Length: 10.4mm

GBP 1.87

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -15 V, +15 V, Height: 9.15mm, Length: 10.4mm

GBP 1.58

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.15mm

GBP 1.11

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 1.67

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 1.85

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 16 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 9.15mm

GBP 1.23

1

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06, Mounting Type: Through Hole, Maximum Drain Source Resistance: 14 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 1.57

1

STMicroelectronics STTD6050H-12M2Y, Thyristor 1200V, 60A 60

GBP 12.15

1

STMicroelectronics STTD6050H-12M2Y, Thyristor 1200V, 60A 60

STMicroelectronics STTD6050H-12M2Y, Thyristor 1200V, 60A 60, Package Type: ACEPACK SMIT, Surge Current Rating: 525A, Pin Count: 9, Peak On-State Voltage: 10V

GBP 9.72

1

STMicroelectronics STTD6050H-12M2Y, Thyristor 1200V, 60A 60

STMicroelectronics STTD6050H-12M2Y, Thyristor 1200V, 60A 60, Package Type: ACEPACK SMIT, Surge Current Rating: 525A, Pin Count: 9, Peak On-State Voltage: 10V

GBP 13.25

1

STMicroelectronics IGBT, 60 A 650 V, 4-Pin TO-247

STMicroelectronics IGBT, 60 A 650 V, 4-Pin TO-247, MPN: STGWA30IH65DF

GBP 2.00

1

STMicroelectronics IGBT, 60 A 650 V, 4-Pin TO-247

STMicroelectronics IGBT, 60 A 650 V, 4-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 108 W, MPN: STGWA30IH65DF

GBP 2.34

1

STMicroelectronics 2STF2360 PNP Transistor, 3 A, 60 V, 3-Pin SOT-89

STMicroelectronics 2STF2360 PNP Transistor, 3 A, 60 V, 3-Pin SOT-89, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.4 W, Minimum DC Current Gain: 80, Transistor Configuration: Single, Maximum Collector Base Voltage: -60 V, Maximum Emitter Base Voltage: -6 V, Maximum Operating Frequency: 130 MHz, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.27

1

STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 108 W

GBP 1.98

1

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -18 V, +18 V, Height: 2.4mm

GBP 0.42

1

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -18 V, +18 V, Height: 2.4mm

GBP 1.06

1

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 50 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 60 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -18 V, +18 V, Height: 2.4mm

GBP 1.27

1

STMicroelectronics 2STF2360 PNP Transistor, 3 A, 60 V, 3-Pin SOT-89

STMicroelectronics 2STF2360 PNP Transistor, 3 A, 60 V, 3-Pin SOT-89, Mounting Type: Surface Mount, Maximum Power Dissipation: 1.4 W, Transistor Configuration: Single, Maximum Collector Base Voltage: -60 V, Maximum Emitter Base Voltage: -6 V, Maximum Operating Frequency: 130 MHz, Dimensions: 4.6 x 2.6 x 1.6mm, Maximum Base Emitter Saturation Voltage: -1.2 V, Maximum Collector Emitter Saturation Voltage: -500 mV

GBP 0.07

1

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Price (EUR)

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin D2PAK STB60NF06LT4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin DPAK STD60NF06T4

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06L

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP60NF06

STMicroelectronics N-Channel MOSFET, 60 A, 60 V, 3-Pin TO-220 STP65NF06

STMicroelectronics STTD6050H-12M2Y, Thyristor 1200V, 60A 60

STMicroelectronics STTD6050H-12M2Y, Thyristor 1200V, 60A 60

STMicroelectronics STTD6050H-12M2Y, Thyristor 1200V, 60A 60

STMicroelectronics IGBT, 60 A 650 V, 4-Pin TO-247

STMicroelectronics IGBT, 60 A 650 V, 4-Pin TO-247

STMicroelectronics 2STF2360 PNP Transistor, 3 A, 60 V, 3-Pin SOT-89

STMicroelectronics STGWA30IH65DF IGBT, 60 A 650 V, 4-Pin TO-247

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4

STMicroelectronics N-Channel MOSFET, 24 A, 60 V, 3-Pin DPAK STD20NF06LT4

STMicroelectronics 2STF2360 PNP Transistor, 3 A, 60 V, 3-Pin SOT-89

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