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STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247™ SCT50N120

GBP 28.13

1

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247™ SCT50N120, Maximum Drain Source Resistance: 0.59 Ω, Maximum Gate Threshold Voltage: 3V

GBP 28.70

1

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247™ SCT50N120, Maximum Drain Source Resistance: 0.59 Ω, Maximum Gate Threshold Voltage: 3V

GBP 24.02

1

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Power Dissipation: 15 W, Minimum DC Current Gain: 30, Transistor Configuration: Single, Maximum Collector Base Voltage: 150 V, Maximum Emitter Base Voltage: 7 V, Dimensions: 2.4 x 6.6 x 6.2mm, Height: 2.4mm, Length: 6.6mm

GBP 0.49

1

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA, Diode Configuration: Single, Minimum Breakdown Voltage: 65V, Mounting Type: Surface Mount, Package Type: DO-214AA (SMB), Maximum Reverse Stand-off Voltage: 55V, Maximum Peak Pulse Current: 100A, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Capacitance: 90pF, Dimensions: 4.6 x 3.95 x 2.45mm, Length: 4.6mm

GBP 1.00

1

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA, Diode Configuration: Single, Minimum Breakdown Voltage: 65V, Mounting Type: Surface Mount, Package Type: DO-214AA (SMB), Maximum Reverse Stand-off Voltage: 55V, Maximum Peak Pulse Current: 100A, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Capacitance: 90pF, Dimensions: 4.6 x 3.95 x 2.45mm, Length: 4.6mm

GBP 1.06

1

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA, Diode Configuration: Single, Minimum Breakdown Voltage: 65V, Mounting Type: Surface Mount, Package Type: DO-214AA (SMB), Maximum Reverse Stand-off Voltage: 55V, Maximum Peak Pulse Current: 100A, Minimum Operating Temperature: -40 °C, Maximum Operating Temperature: +150 °C, Capacitance: 90pF, Dimensions: 4.6 x 3.95 x 2.45mm, Length: 4.6mm

GBP 0.47

1

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Power Dissipation: 15 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 150 V, Maximum Emitter Base Voltage: 7 V, Dimensions: 2.4 x 6.6 x 6.2mm, Maximum Base Emitter Saturation Voltage: 1.15 V, Maximum Collector Emitter Saturation Voltage: 0.6 V, Maximum Operating Temperature: +150 °C

GBP 0.29

1

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK, Package Type: DPAK (TO-252), Mounting Type: Surface Mount, Maximum Power Dissipation: 15 W, Transistor Configuration: Single, Maximum Collector Base Voltage: 150 V, Maximum Emitter Base Voltage: 7 V, Dimensions: 2.4 x 6.6 x 6.2mm, Maximum Base Emitter Saturation Voltage: 1.15 V, Maximum Collector Emitter Saturation Voltage: 0.6 V, Maximum Operating Temperature: +150 °C

GBP 0.65

1

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: 12V, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -65 °C

GBP 2.57

1

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: 12V, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -65 °C

GBP 0.95

1

STMicroelectronics Diode, 2-Pin DO-15 STTH1R02QRL

STMicroelectronics Diode, 2-Pin DO-15 STTH1R02QRL, Diode Configuration: Single, Mounting Type: Through Hole, Diode Technology: Silicon Junction, Maximum Forward Voltage Drop: 1.2V, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Length: 6.75mm, Width: 3.53mm, Dimensions: 3.53 x 6.75 x 3.53mm

GBP 0.20

1

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: 12V, Transistor Configuration: Single, Length: 10.4mm, Width: 9.35mm, Height: 4.6mm, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -65 °C

GBP 2.17

1

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 65 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 1.63

1

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 65 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 10.4mm, Width: 9.35mm, Height: 4.6mm, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +150 °C

GBP 1.39

1

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 65 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 10.4mm, Width: 9.35mm, Height: 4.6mm, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +150 °C

GBP 1.44

1

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 65 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 1.70

1

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC, Diode Configuration: Single, Maximum Clamping Voltage: 8.5V, Minimum Breakdown Voltage: 6V, Mounting Type: Surface Mount, Maximum Peak Pulse Current: 120A, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 7.15 x 6.25 x 2.45mm

GBP 1.17

1

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC, Diode Configuration: Single, Maximum Clamping Voltage: 8.5V, Minimum Breakdown Voltage: 6V, Mounting Type: Surface Mount, Maximum Peak Pulse Current: 120A, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 7.15 x 6.25 x 2.45mm

GBP 0.99

1

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC, Diode Configuration: Single, Maximum Clamping Voltage: 8.5V, Minimum Breakdown Voltage: 6V, Mounting Type: Surface Mount, Maximum Peak Pulse Current: 120A, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 7.15 x 6.25 x 2.45mm

GBP 0.49

1

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 65 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 0.59

1

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 65 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 10.4 x 9.35 x 4.6mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 0.59

1

STMicroelectronics TIP41C NPN Transistor, 6 A, 100 V, 3-Pin TO-220

STMicroelectronics TIP41C NPN Transistor, 6 A, 100 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 9.15 x 10.4 x 4.6mm, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Operating Temperature: +150 °C

GBP 0.63

1

STMicroelectronics TIP41C NPN Transistor, 6 A, 100 V, 3-Pin TO-220

STMicroelectronics TIP41C NPN Transistor, 6 A, 100 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 65 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 5 V, Dimensions: 9.15 x 10.4 x 4.6mm, Maximum Collector Emitter Saturation Voltage: 1.5 V, Maximum Operating Temperature: +150 °C

GBP 0.42

1

STMicroelectronics P6KE24A, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

STMicroelectronics P6KE24A, Uni-Directional TVS Diode, 600W, 2-Pin DO-15, Diode Configuration: Single, Maximum Clamping Voltage: 42.8V, Minimum Breakdown Voltage: 22.8V, Mounting Type: Through Hole, Maximum Reverse Stand-off Voltage: 20.5V, Maximum Peak Pulse Current: 93A, Minimum Operating Temperature: -65 °C, Maximum Operating Temperature: +175 °C, Dimensions: 6.75 x 3.53 x 3.53mm

GBP 0.33

1

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Merchant

Price (EUR)

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics SMP100LC-65, Bi-Directional TVS Diode, 2-Pin DO-214AA

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK

STMicroelectronics 2STD1665T4 NPN Transistor, 6 A, 65 V, 3-Pin DPAK

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics Diode, 2-Pin DO-15 STTH1R02QRL

STMicroelectronics STGB10NB37LZT4 IGBT, 20 A 375 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC

STMicroelectronics SM5908, Uni-Directional TVS Diode, 1500W, 2-Pin SMC

STMicroelectronics STGB10NC60KDT4 IGBT, 20 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics STGB10NC60HDT4 IGBT, 10 A 600 V, 3-Pin D2PAK (TO-263), Surface Mount

STMicroelectronics TIP41C NPN Transistor, 6 A, 100 V, 3-Pin TO-220

STMicroelectronics TIP41C NPN Transistor, 6 A, 100 V, 3-Pin TO-220

STMicroelectronics P6KE24A, Uni-Directional TVS Diode, 600W, 2-Pin DO-15

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