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STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Length: 15.9mm, Width: 5.3mm, Height: 20.3mm, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C

GBP 10.11

1

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 9.70

1

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole, Maximum Gate Emitter Voltage: ±20V, Maximum Power Dissipation: 278 W, Switching Speed: 1MHz, Transistor Configuration: Single, Dimensions: 15.9 x 5.3 x 20.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -55 °C

GBP 11.00

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.95mm

GBP 1.72

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.95mm

GBP 1.94

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 6 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 5 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 0.95mm

GBP 0.78

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.31

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.30

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 3.2 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Maximum Power Dissipation: 300 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm, Length: 10.4mm

GBP 2.71

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 312 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.15mm

GBP 6.94

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 312 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.15mm

GBP 4.02

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 2.29

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 1.34

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.4mm

GBP 1.70

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 3.9 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 250 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 2.43

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 1.80

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.4mm

GBP 2.01

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 1.54

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10, Mounting Type: Through Hole, Maximum Drain Source Resistance: 10.5 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 312 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 20.15mm

GBP 4.70

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 30 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 16.4mm

GBP 1.70

1

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 1.54

1

STMicroelectronics BUL89 NPN Transistor, 12 A, 850 V, 3-Pin TO-220

STMicroelectronics BUL89 NPN Transistor, 12 A, 850 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Maximum Emitter Base Voltage: 9 V, Dimensions: 10.4 x 4.6 x 15.75mm, Length: 10.4mm, Maximum Base Emitter Saturation Voltage: 1.6 V

GBP 1.95

1

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.54

1

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.78

1

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 11 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 110 W, Transistor Configuration: Single, Height: 15.75mm, Length: 10.4mm

GBP 1.46

1

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics STGY50NC60WD IGBT, 110 A 600 V, 3-Pin Max247, Through Hole

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 8-Pin PowerFLAT STL110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP240N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin H2PAK STH150N10F7-2

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-247 STW120NF10

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220FP STF45N10F7

STMicroelectronics N-Channel MOSFET, 110 A, 100 V, 3-Pin TO-220 STP110N10F7

STMicroelectronics BUL89 NPN Transistor, 12 A, 850 V, 3-Pin TO-220

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 62 A, 33 V, 3-Pin TO-220 STP62NS04Z

STMicroelectronics N-Channel MOSFET, 80 A, 33 V, 3-Pin TO-220 STP75NS04Z

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