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STMicroelectronics BU941ZPFI NPN Darlington Transistor, 15 A 350 V HFE:300, 3-Pin TO-3PF

STMicroelectronics BU941ZPFI NPN Darlington Transistor, 15 A 350 V HFE:300, 3-Pin TO-3PF, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 2.7 V, Maximum Collector Emitter Saturation Voltage: 2 V, Dimensions: 15.7 x 5.7 x 15.2mm, Length: 15.7mm

GBP 5.06

1

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 7.11

1

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 700 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 7.63

1

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 7.88

1

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 700 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 7.65

1

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z, Mounting Type: Through Hole, Maximum Drain Source Resistance: 550 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 20.15mm

GBP 6.79

1

STMicroelectronics N-Channel MOSFET, 51 A, 600 V, 3-Pin TO-247 STW55NM60ND

STMicroelectronics N-Channel MOSFET, 51 A, 600 V, 3-Pin TO-247 STW55NM60ND, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 7.63

1

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 6.05

1

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 6.06

1

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 55 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 350 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.6V

GBP 7.04

1

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STMicroelectronics BU941ZPFI NPN Darlington Transistor, 15 A 350 V HFE:300, 3-Pin TO-3PF

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z

STMicroelectronics N-Channel MOSFET, 13 A, 1000 V, 3-Pin TO-247 STW13NK100Z

STMicroelectronics N-Channel MOSFET, 15 A, 900 V, 3-Pin TO-247 STW15NK90Z

STMicroelectronics N-Channel MOSFET, 51 A, 600 V, 3-Pin TO-247 STW55NM60ND

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

STMicroelectronics N-Channel MOSFET, 52 A, 650 V, 3-Pin TO-247 STW56N60M2

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