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STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V

GBP 17.74

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

GBP 27.21

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

GBP 24.75

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

GBP 26.30

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 25.52

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 28.95

1

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

GBP 22.60

1

STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V

STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.24 O, Maximum Gate Threshold Voltage: 5V, Number of Elements per Chip: 1

GBP 20.14

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 27.98

1

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7, Maximum Drain Source Resistance: 0.024 Ω, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 18.06

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.024 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 25.26

1

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 0.024 O, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V

GBP 22.02

1

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG, Maximum Drain Source Resistance: 0.02 Ω, Maximum Gate Threshold Voltage: 5V

GBP 18.83

1

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG, Maximum Drain Source Resistance: 0.02 Ω, Maximum Gate Threshold Voltage: 5V

GBP 29.13

1

STMicroelectronics N-Channel MOSFET, 96 A, 650 V, 3-Pin Max247 STY112N65M5

STMicroelectronics N-Channel MOSFET, 96 A, 650 V, 3-Pin Max247 STY112N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 22 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 625 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.3mm

GBP 26.09

1

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 625 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Forward Diode Voltage: 1.5V

GBP 30.77

1

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 625 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Forward Diode Voltage: 1.5V

GBP 33.27

1

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 15 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 625 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Forward Diode Voltage: 1.5V

GBP 33.36

1

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Gender

Merchant

Price (EUR)

STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 3-Pin HiP247 SCTW90N65G2V

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

STMicroelectronics MOSFET, 40 A, 650 V, 8-Pin PowerFLAT 8x8 HV SCTL90N65G2V

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 116 A, 650 V, 7-Pin H²PAK-7 SCTH90N65G2V-7

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET, 119 A, 650 V, 4-Pin HiP247-4 SCTWA90N65G2V-4

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

STMicroelectronics SiC N-Channel MOSFET Module, 98 A, 650 V Depletion, 7-Pin H2PAK-7 SCTH100N65G2-7AG

STMicroelectronics N-Channel MOSFET, 96 A, 650 V, 3-Pin Max247 STY112N65M5

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

STMicroelectronics N-Channel MOSFET, 138 A, 650 V, 3-Pin Max247 STY145N65M5

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