STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247 SCT50N120
STMicroelectronics SiC N-Channel MOSFET Module, 65 A, 1200 V Depletion, 3-Pin HiP247™ SCT50N120, Maximum Drain Source Resistance: 0.59 Ω, Maximum Gate Threshold Voltage: 3V