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STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK

STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 W, Transistor Configuration: Common Emitter, Maximum Emitter Base Voltage: 5 V, Dimensions: 10.4 x 9.35 x 4.37mm, Maximum Base Emitter Saturation Voltage: 2.5 V, Maximum Collector Emitter Saturation Voltage: 1.8 V, Maximum Operating Temperature: +150 °C

GBP 1.98

1

STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK

STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 W, Transistor Configuration: Common Emitter, Maximum Emitter Base Voltage: 5 V, Dimensions: 10.4 x 9.35 x 4.37mm, Maximum Base Emitter Saturation Voltage: 2.5 V, Maximum Collector Emitter Saturation Voltage: 1.8 V, Maximum Operating Temperature: +150 °C

GBP 3.63

1

STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK

STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK, Maximum DC Collector Current: 15 A, 30 (Peak) A, Mounting Type: Surface Mount, Maximum Power Dissipation: 150 W, Minimum DC Current Gain: 300, Transistor Configuration: Common Emitter, Maximum Emitter Base Voltage: 5 V, Dimensions: 10.4 x 9.35 x 4.37mm, Length: 10.4mm, Maximum Base Emitter Saturation Voltage: 2.5 V

GBP 3.07

1

STMicroelectronics BU941ZPFI NPN Darlington Transistor, 15 A 350 V HFE:300, 3-Pin TO-3PF

STMicroelectronics BU941ZPFI NPN Darlington Transistor, 15 A 350 V HFE:300, 3-Pin TO-3PF, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 2.7 V, Maximum Collector Emitter Saturation Voltage: 2 V, Dimensions: 15.7 x 5.7 x 15.2mm, Length: 15.7mm

GBP 4.35

1

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Common Emitter, Maximum Emitter Base Voltage: 5 V, Dimensions: 10.4 x 4.6 x 15.75mm, Maximum Base Emitter Saturation Voltage: 2.5 V, Maximum Collector Emitter Saturation Voltage: 1.8 V, Maximum Operating Temperature: +150 °C

GBP 3.21

1

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Transistor Configuration: Common Emitter, Maximum Emitter Base Voltage: 5 V, Dimensions: 10.4 x 4.6 x 15.75mm, Maximum Base Emitter Saturation Voltage: 2.5 V, Maximum Collector Emitter Saturation Voltage: 1.8 V, Maximum Operating Temperature: +150 °C

GBP 2.74

1

STMicroelectronics ST901T NPN Darlington Transistor, 4 A 350 V HFE:500, 3-Pin TO-220

STMicroelectronics ST901T NPN Darlington Transistor, 4 A 350 V HFE:500, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.8 V, Maximum Collector Emitter Saturation Voltage: 2 V, Maximum Collector Cut-off Current: 500µA, Dimensions: 6.6 x 2.4 x 6.2mm

GBP 1.08

1

STMicroelectronics ST901T NPN Darlington Transistor, 4 A 350 V HFE:500, 3-Pin TO-220

STMicroelectronics ST901T NPN Darlington Transistor, 4 A 350 V HFE:500, 3-Pin TO-220, Maximum Emitter Base Voltage: 5 V, Mounting Type: Through Hole, Transistor Configuration: Single, Maximum Base Emitter Saturation Voltage: 1.8 V, Maximum Collector Emitter Saturation Voltage: 2 V, Maximum Collector Cut-off Current: 500µA, Dimensions: 6.6 x 2.4 x 6.2mm

GBP 1.02

1

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB, Maximum DC Collector Current: 15 A, 30 (Peak) A, Mounting Type: Through Hole, Maximum Power Dissipation: 150 W, Minimum DC Current Gain: 300, Transistor Configuration: Common Emitter, Maximum Emitter Base Voltage: 5 V, Dimensions: 10.4 x 4.6 x 15.75mm, Length: 10.4mm, Maximum Base Emitter Saturation Voltage: 2.5 V

GBP 3.02

1

STMicroelectronics ULQ2803A Octal NPN Darlington Transistor, 500 mA 50 V HFE:1000 @ 350 mA @ 2 V, 18-Pin PDIP

STMicroelectronics ULQ2803A Octal NPN Darlington Transistor, 500 mA 50 V HFE:1000 @ 350 mA @ 2 V, 18-Pin PDIP, Maximum Emitter Base Voltage: 30 V, Mounting Type: Through Hole, Transistor Configuration: Common Emitter, Maximum Collector Emitter Saturation Voltage: 1.6 V, Base Current: 25mA, Dimensions: 23.24 x 7.1 x 3.67mm

GBP 1.16

1

STMicroelectronics ULQ2003A, 7-element NPN Darlington Transistor, 500 mA 50 V HFE:1000 @ 350 mA @ 2 V, 16-Pin PDIP

STMicroelectronics ULQ2003A, 7-element NPN Darlington Transistor, 500 mA 50 V HFE:1000 @ 350 mA @ 2 V, 16-Pin PDIP, Maximum Emitter Base Voltage: 30 V, Mounting Type: Through Hole, Transistor Configuration: Common Emitter, Maximum Collector Emitter Saturation Voltage: 1.6 V, Base Current: 25mA, Dimensions: 20 x 7.1 x 4.59mm

GBP 0.64

1

STMicroelectronics L78L24ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L24ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89, Output Voltage: 24 V, Line Regulation: 350 mV, Accuracy: ±5%, Load Regulation: 200 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 6.5mA, Output Type: Fixed, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.36

1

STMicroelectronics L78L24CD-TR, 1 Linear Voltage, Voltage Regulator 100mA 8-Pin, SOIC

STMicroelectronics L78L24CD-TR, 1 Linear Voltage, Voltage Regulator 100mA 8-Pin, SOIC, Output Voltage: 24 V, Line Regulation: 350 mV, Accuracy: ±10%, Load Regulation: 200 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 6.5mA, Output Type: Fixed, Dimensions: 5 x 4 x 1.65mm

GBP 0.11

1

STMicroelectronics L78L24CD-TR, 1 Linear Voltage, Voltage Regulator 100mA 8-Pin, SOIC

STMicroelectronics L78L24CD-TR, 1 Linear Voltage, Voltage Regulator 100mA 8-Pin, SOIC, Output Voltage: 24 V, Line Regulation: 350 mV, Accuracy: ±10%, Load Regulation: 200 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 6.5mA, Output Type: Fixed, Dimensions: 5 x 4 x 1.65mm

GBP 0.29

1

STMicroelectronics L78L24ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L24ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89, Output Voltage: 24 V, Line Regulation: 350 mV, Accuracy: ±5%, Load Regulation: 200 mV, Mounting Type: Surface Mount, Polarity: Positive, Quiescent Current: 6.5mA, Output Type: Fixed, Dimensions: 4.6 x 2.6 x 1.6mm

GBP 0.16

1

STMicroelectronics L78L24ACZ-AP, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, TO-92

STMicroelectronics L78L24ACZ-AP, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, TO-92, Output Voltage: 24 V, Line Regulation: 350 mV, Accuracy: ±5%, Load Regulation: 200 mV, Mounting Type: Through Hole, Polarity: Positive, Quiescent Current: 6.5mA, Output Type: Fixed, Dimensions: 4.95 x 3.94 x 4.95mm

GBP 0.26

1

STMicroelectronics L78L24ACZ-AP, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, TO-92

STMicroelectronics L78L24ACZ-AP, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, TO-92, Output Voltage: 24 V, Line Regulation: 350 mV, Accuracy: ±5%, Load Regulation: 200 mV, Mounting Type: Through Hole, Polarity: Positive, Quiescent Current: 6.5mA, Output Type: Fixed, Dimensions: 4.95 x 3.94 x 4.95mm

GBP 0.10

1

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V, Height: 4.37mm

GBP 3.36

1

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V, Height: 4.37mm

GBP 2.86

1

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Forward Diode Voltage: 1.5V, Height: 4.37mm

GBP 1.84

1

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm

GBP 2.75

1

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm

GBP 2.92

1

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50, Mounting Type: Through Hole, Maximum Drain Source Resistance: 350 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 160 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -30 V, +30 V, Height: 9.15mm

GBP 3.22

1

STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6

STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 90 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.1V

GBP 0.35

1

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 40 mΩ, Channel Mode: Enhancement, Minimum Gate Threshold Voltage: 0.7V, Maximum Power Dissipation: 350 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -8 V, +8 V, Number of Elements per Chip: 1, Height: 1.3mm, Length: 3.04mm

GBP 0.34

1

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK

STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK

STMicroelectronics BUB941ZTT4 Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin D2PAK

STMicroelectronics BU941ZPFI NPN Darlington Transistor, 15 A 350 V HFE:300, 3-Pin TO-3PF

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220

STMicroelectronics ST901T NPN Darlington Transistor, 4 A 350 V HFE:500, 3-Pin TO-220

STMicroelectronics ST901T NPN Darlington Transistor, 4 A 350 V HFE:500, 3-Pin TO-220

STMicroelectronics BU941ZT Dual NPN Bipolar Transistor, 30 A, 350 V, 3-Pin TO-220AB

STMicroelectronics ULQ2803A Octal NPN Darlington Transistor, 500 mA 50 V HFE:1000 @ 350 mA @ 2 V, 18-Pin PDIP

STMicroelectronics ULQ2003A, 7-element NPN Darlington Transistor, 500 mA 50 V HFE:1000 @ 350 mA @ 2 V, 16-Pin PDIP

STMicroelectronics L78L24ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L24CD-TR, 1 Linear Voltage, Voltage Regulator 100mA 8-Pin, SOIC

STMicroelectronics L78L24CD-TR, 1 Linear Voltage, Voltage Regulator 100mA 8-Pin, SOIC

STMicroelectronics L78L24ACUTR, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, SOT-89

STMicroelectronics L78L24ACZ-AP, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, TO-92

STMicroelectronics L78L24ACZ-AP, 1 Linear Voltage, Voltage Regulator 100mA 3-Pin, TO-92

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4

STMicroelectronics N-Channel MOSFET, 12 A, 3-Pin D2PAK STB12NM50T4

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50

STMicroelectronics N-Channel MOSFET, 12 A, 500 V, 3-Pin TO-220 STP12NM50

STMicroelectronics P-Channel MOSFET, 2 A, 30 V, 3-Pin SOT-23 STR2P3LLH6

STMicroelectronics N-Channel MOSFET, 2.3 A, 20 V, 3-Pin SOT-23 STR2N2VH5

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