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STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 3.18

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 3.79

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 2.58

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 2.55

1

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 1.80

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 3.16

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7, Mounting Type: Through Hole, Maximum Drain Source Resistance: 2.7 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 15.75mm

GBP 3.72

1

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 2.90

1

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 2.3 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4.5V, Minimum Gate Threshold Voltage: 2.5V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 3.56

1

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 21 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 315 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -20 V, +20 V, Height: 4.8mm

GBP 3.08

1

STMicroelectronics, 28V Zener Diode 400 W SMT 2-Pin StmiteFLAT

STMicroelectronics, 28V Zener Diode 400 W SMT 2-Pin StmiteFLAT, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Maximum Reverse Leakage Current: 200nA, Dimensions: 3.1 x 0.95 x 2.05mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMM4F28A-TR

GBP 0.09

1

STMicroelectronics, 28V Zener Diode 400 W SMT 2-Pin StmiteFLAT

STMicroelectronics, 28V Zener Diode 400 W SMT 2-Pin StmiteFLAT, Diode Configuration: Single, Mounting Type: Surface Mount, Number of Elements per Chip: 1, Maximum Reverse Leakage Current: 200nA, Dimensions: 3.1 x 0.95 x 2.05mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMM4F28A-TR

GBP 0.25

1

STMicroelectronics, 10V Zener Diode 450 W SMT 6-Pin SOD-523

STMicroelectronics, 10V Zener Diode 450 W SMT 6-Pin SOD-523, Diode Configuration: Single, Mounting Type: Surface Mount, Maximum Reverse Leakage Current: 500nA, Dimensions: 1.3 x 0.7 x 0.9mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C, MPN: ESDA12-1K

GBP 0.21

1

STMicroelectronics, 24V Zener Diode 5 W Through Hole 2-Pin R6

STMicroelectronics, 24V Zener Diode 5 W Through Hole 2-Pin R6, Diode Configuration: Single, Number of Elements per Chip: 1, Maximum Reverse Leakage Current: 300µA, Dimensions: 9.1 (Dia.) x 9.1mm, Forward Current: 10A, Forward Voltage: 0.9V, Maximum Operating Temperature: +175 °C, MPN: LDP24A

GBP 1.62

1

STMicroelectronics, 24V Zener Diode 5 W Through Hole 2-Pin R6

STMicroelectronics, 24V Zener Diode 5 W Through Hole 2-Pin R6, Diode Configuration: Single, Number of Elements per Chip: 1, Maximum Reverse Leakage Current: 300µA, Dimensions: 9.1 (Dia.) x 9.1mm, Forward Current: 10A, Forward Voltage: 0.9V, Maximum Operating Temperature: +175 °C, MPN: LDP24A

GBP 2.25

1

STMicroelectronics, 28V Zener Diode 1.7 W Through Hole 2-Pin DO-15

STMicroelectronics, 28V Zener Diode 1.7 W Through Hole 2-Pin DO-15, Diode Configuration: Single, Maximum Reverse Leakage Current: 200nA, Dimensions: 3.53 (Dia.) x 6.75mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: BZW06-28

GBP 0.14

1

STMicroelectronics, 28V Zener Diode 1.7 W Through Hole 2-Pin DO-15

STMicroelectronics, 28V Zener Diode 1.7 W Through Hole 2-Pin DO-15, Diode Configuration: Single, Maximum Reverse Leakage Current: 200nA, Dimensions: 3.53 (Dia.) x 6.75mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: BZW06-28

GBP 0.29

1

STMicroelectronics ,32 (Typ.)W, 20-Pin PowerSO E-TDA7391PDTR

STMicroelectronics ,32 (Typ.)W, 20-Pin PowerSO E-TDA7391PDTR, Amplifier Type: Bridge Amplifier, Amplifier Class: Class A-B, Mounting Type: Surface Mount, Typical Single Supply Voltage: 8 → 18 V, Input Signal Type: Differential, Output Signal Type: Single Ended, Minimum CMRR: 65dB, Dimensions: 16 x 11.1 x 3.3mm, Maximum Operating Temperature: +150 °C, Minimum Operating Temperature: -40 °C

GBP 1.78

1

STMicroelectronics, 48V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 48V Zener Diode 600 W SMT 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Leakage Current: 200nA, Dimensions: 2.9 x 2.25 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMA6J48A-TR

GBP 0.12

1

STMicroelectronics, 6V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 6V Zener Diode 600 W SMT 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Leakage Current: 20µA, Dimensions: 2.9 x 2.25 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMA6J6.0A-TR

GBP 0.22

1

STMicroelectronics, 24V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 24V Zener Diode 600 W SMT 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Leakage Current: 200nA, Dimensions: 2.9 x 2.25 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMA6J24A-TR

GBP 0.12

1

STMicroelectronics, 10V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 10V Zener Diode 600 W SMT 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Leakage Current: 200nA, Dimensions: 2.9 x 2.25 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMA6J10A-TR

GBP 0.31

1

STMicroelectronics, 48V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 48V Zener Diode 600 W SMT 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Leakage Current: 200nA, Dimensions: 2.9 x 2.25 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMA6J48A-TR

GBP 0.31

1

STMicroelectronics, 40V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 40V Zener Diode 600 W SMT 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Leakage Current: 200nA, Dimensions: 2.9 x 2.25 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMA6J40A-TR

GBP 0.12

1

STMicroelectronics, 12V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 12V Zener Diode 600 W SMT 2-Pin DO-214AC, Diode Configuration: Single, Mounting Type: Surface Mount, Package Type: DO-214AC (SMA), Maximum Reverse Leakage Current: 200nA, Dimensions: 2.9 x 2.25 x 4.6mm, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -55 °C, MPN: SMA6J12A-TR

GBP 0.12

1

Brand

Gender

Merchant

Price (EUR)

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 7-Pin H2PAK STH310N10F7-6

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin TO-220 STP310N10F7

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 100 V, 3-Pin H2PAK STH310N10F7-2

STMicroelectronics N-Channel MOSFET, 180 A, 80 V, 3-Pin H2PAK-2 STH270N8F7-2

STMicroelectronics, 28V Zener Diode 400 W SMT 2-Pin StmiteFLAT

STMicroelectronics, 28V Zener Diode 400 W SMT 2-Pin StmiteFLAT

STMicroelectronics, 10V Zener Diode 450 W SMT 6-Pin SOD-523

STMicroelectronics, 24V Zener Diode 5 W Through Hole 2-Pin R6

STMicroelectronics, 24V Zener Diode 5 W Through Hole 2-Pin R6

STMicroelectronics, 28V Zener Diode 1.7 W Through Hole 2-Pin DO-15

STMicroelectronics, 28V Zener Diode 1.7 W Through Hole 2-Pin DO-15

STMicroelectronics ,32 (Typ.)W, 20-Pin PowerSO E-TDA7391PDTR

STMicroelectronics, 48V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 6V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 24V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 10V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 48V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 40V Zener Diode 600 W SMT 2-Pin DO-214AC

STMicroelectronics, 12V Zener Diode 600 W SMT 2-Pin DO-214AC

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