STMicroelectronics N-Channel MOSFET, 19.5 A, 600 V, 3-Pin D2PAK STB23NM60ND
STMicroelectronics N-Channel MOSFET, 19.5 A, 600 V, 3-Pin D2PAK STB23NM60ND, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 180 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 150 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 4.6mm