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STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 7.28

1

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 6.59

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 6.83

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 5.40

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 6.26

1

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 6.58

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 5.39

1

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 6.26

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 5.90

1

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 7.65

1

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N, Mounting Type: Through Hole, Maximum Drain Source Resistance: 105 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 15.75mm

GBP 6.28

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5, Mounting Type: Through Hole, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 20.15mm

GBP 5.84

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 4.6mm

GBP 3.81

1

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Forward Diode Voltage: 1.6V

GBP 5.90

1

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Forward Diode Voltage: 1.6V

GBP 6.96

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 4.6mm

GBP 6.48

1

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2, Mounting Type: Through Hole, Maximum Drain Source Resistance: 110 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Forward Diode Voltage: 1.6V

GBP 5.90

1

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5, Package Type: D2PAK (TO-263), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 78 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 210 W, Transistor Configuration: Single, Maximum Gate Source Voltage: -25 V, +25 V, Height: 4.6mm

GBP 5.57

1

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Price (EUR)

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-220 STP45N65M5

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-247 STW34NM60N

STMicroelectronics N-Channel MOSFET, 29 A, 600 V, 3-Pin TO-220 STP34NM60N

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin TO-247 STW45N65M5

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5

STMicroelectronics N-Channel MOSFET, 28 A, 600 V, 3-Pin TO-247 STW35N60DM2

STMicroelectronics N-Channel MOSFET, 35 A, 710 V, 3-Pin D2PAK STB45N65M5

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