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ROHM SiC N-Channel MOSFET, 38 A, 650 V, 7-Pin D2PAK SCT3060AW7TL

GBP 10.44

1

ROHM SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK SCT3080AW7TL

GBP 7.98

1

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 7-Pin D2PAK SCT3030AW7TL

GBP 20.89

1

ROHM SiC N-Channel MOSFET, 21 A, 650 V, 7-Pin D2PAK SCT3120AW7TL

GBP 6.74

1

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 7-Pin D2PAK SCT3030AW7TL

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 7-Pin D2PAK SCT3030AW7TL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mO, Maximum Gate Threshold Voltage: 5.6V

GBP 19.94

1

ROHM SiC N-Channel MOSFET, 38 A, 650 V, 7-Pin D2PAK SCT3060AW7TL

ROHM SiC N-Channel MOSFET, 38 A, 650 V, 7-Pin D2PAK SCT3060AW7TL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 60 mO, Maximum Gate Threshold Voltage: 5.6V

GBP 11.37

1

ROHM SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK SCT3080AW7TL

ROHM SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK SCT3080AW7TL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mO, Maximum Gate Threshold Voltage: 5.6V

GBP 8.69

1

ROHM SiC N-Channel MOSFET, 21 A, 650 V, 7-Pin D2PAK SCT3120AW7TL

ROHM SiC N-Channel MOSFET, 21 A, 650 V, 7-Pin D2PAK SCT3120AW7TL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mO, Maximum Gate Threshold Voltage: 5.6V

GBP 7.47

1

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 7-Pin D2PAK SCT3030AW7TL

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 7-Pin D2PAK SCT3030AW7TL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 30 mO, Maximum Gate Threshold Voltage: 5.6V

GBP 23.71

1

ROHM SiC N-Channel MOSFET, 21 A, 650 V, 7-Pin D2PAK SCT3120AW7TL

ROHM SiC N-Channel MOSFET, 21 A, 650 V, 7-Pin D2PAK SCT3120AW7TL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 120 mO, Maximum Gate Threshold Voltage: 5.6V

GBP 5.35

1

ROHM SiC N-Channel MOSFET, 38 A, 650 V, 7-Pin D2PAK SCT3060AW7TL

ROHM SiC N-Channel MOSFET, 38 A, 650 V, 7-Pin D2PAK SCT3060AW7TL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 60 mO, Maximum Gate Threshold Voltage: 5.6V

GBP 8.62

1

ROHM SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK SCT3080AW7TL

ROHM SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK SCT3080AW7TL, Package Type: TO-263, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 80 mO, Maximum Gate Threshold Voltage: 5.6V

GBP 6.58

1

ROHM RGTV00TK65GVC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV00TK65GVC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 2890pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.49

1

ROHM RGT00TS65DGC11 IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGT00TS65DGC11 IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 277 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 2770pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 3.79

1

ROHM RGTH60TS65DGC11 IGBT, 58 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTH60TS65DGC11 IGBT, 58 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 194 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 66pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.48

1

ROHM RGTH60TS65DGC11 IGBT, 58 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTH60TS65DGC11 IGBT, 58 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 194 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 66pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.11

1

ROHM RGTVX6TS65GC11 IGBT, 144 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTVX6TS65GC11 IGBT, 144 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 404 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 4810pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 5.16

1

ROHM RGTH40TS65DGC11 IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTH40TS65DGC11 IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 144 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 47pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 2.18

1

ROHM RGTH80TS65DGC11 IGBT, 70 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTH80TS65DGC11 IGBT, 70 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 234 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 85pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 3.04

1

ROHM RGTV00TS65GC11 IGBT, 95 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTV00TS65GC11 IGBT, 95 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 276 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 2890pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.08

1

ROHM RGTV60TK65GVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV60TK65GVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 76 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 1730pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 3.87

1

ROHM RGTV60TS65DGC11 IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTV60TS65DGC11 IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 194 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 1730pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.16

1

ROHM RGTV60TK65DGVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV60TK65DGVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 76 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 1730pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.67

1

ROHM RGTH40TS65GC11 IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTH40TS65GC11 IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 144 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 47pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 1.84

1

ROHM RGTV00TK65DGC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV00TK65DGC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole, Maximum Gate Emitter Voltage: ±30V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Dimensions: 16 x 5 x 21mm, Gate Capacitance: 2890pF, Maximum Operating Temperature: +175 °C, Minimum Operating Temperature: -40 °C

GBP 4.56

1

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Price (EUR)

ROHM SiC N-Channel MOSFET, 38 A, 650 V, 7-Pin D2PAK SCT3060AW7TL

ROHM SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK SCT3080AW7TL

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 7-Pin D2PAK SCT3030AW7TL

ROHM SiC N-Channel MOSFET, 21 A, 650 V, 7-Pin D2PAK SCT3120AW7TL

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 7-Pin D2PAK SCT3030AW7TL

ROHM SiC N-Channel MOSFET, 38 A, 650 V, 7-Pin D2PAK SCT3060AW7TL

ROHM SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK SCT3080AW7TL

ROHM SiC N-Channel MOSFET, 21 A, 650 V, 7-Pin D2PAK SCT3120AW7TL

ROHM SiC N-Channel MOSFET, 70 A, 650 V, 7-Pin D2PAK SCT3030AW7TL

ROHM SiC N-Channel MOSFET, 21 A, 650 V, 7-Pin D2PAK SCT3120AW7TL

ROHM SiC N-Channel MOSFET, 38 A, 650 V, 7-Pin D2PAK SCT3060AW7TL

ROHM SiC N-Channel MOSFET, 29 A, 650 V, 7-Pin D2PAK SCT3080AW7TL

ROHM RGTV00TK65GVC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGT00TS65DGC11 IGBT, 85 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTH60TS65DGC11 IGBT, 58 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTH60TS65DGC11 IGBT, 58 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTVX6TS65GC11 IGBT, 144 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTH40TS65DGC11 IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTH80TS65DGC11 IGBT, 70 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTV00TS65GC11 IGBT, 95 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTV60TK65GVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTV60TS65DGC11 IGBT, 60 A 650 V, 3-Pin TO-247, Through Hole

ROHM RGTV60TK65DGVC11 IGBT, 33 A 650 V, 3-Pin TO-3PFM, Through Hole

ROHM RGTH40TS65GC11 IGBT, 40 A 650 V, 3-Pin TO-247N, Through Hole

ROHM RGTV00TK65DGC11 IGBT, 45 A 650 V, 3-Pin TO-3PFM, Through Hole

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