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ROHM N-Channel MOSFET, 500 mA, 30 V, 3-Pin SMT RJK005N03T146

ROHM N-Channel MOSFET, 500 mA, 30 V, 3-Pin SMT RJK005N03T146, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 1.5V, Maximum Power Dissipation: 200 mW, Transistor Configuration: Single, Maximum Gate Source Voltage: -12 V, +12 V, Height: 1.1mm, Length: 2.9mm

GBP 0.25

1

ROHM N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FM R6009JNXC7G

ROHM N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FM R6009JNXC7G, Mounting Type: Through Hole, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 7V, Minimum Gate Threshold Voltage: 5V, Maximum Power Dissipation: 53 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Height: 16.27mm

GBP 2.13

1

ROHM N-Channel MOSFET, 9 A, 650 V, 3-Pin D2PAK R6509KNJTL

ROHM N-Channel MOSFET, 9 A, 650 V, 3-Pin D2PAK R6509KNJTL, Package Type: TO-263S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5V, Minimum Gate Threshold Voltage: 3V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 2.42

1

ROHM N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-346T RQ5P010SNTL

ROHM N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-346T RQ5P010SNTL, Package Type: SOT-346T (SC-96), Mounting Type: Surface Mount, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 2.5V, Minimum Gate Threshold Voltage: 1V, Maximum Power Dissipation: 1 W, Maximum Gate Source Voltage: -20 V, +20 V, Forward Diode Voltage: 1.2V, Height: 0.95mm

GBP 0.33

1

ROHM N-Channel MOSFET, 9 A, 650 V, 3-Pin D2PAK R6509ENJTL

ROHM N-Channel MOSFET, 9 A, 650 V, 3-Pin D2PAK R6509ENJTL, Package Type: TO-263S, Mounting Type: Surface Mount, Maximum Drain Source Resistance: 580 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 4V, Minimum Gate Threshold Voltage: 2V, Maximum Power Dissipation: 94 W, Transistor Configuration: Single, Maximum Gate Source Voltage: ±30 V, Number of Elements per Chip: 1, Forward Diode Voltage: 1.5V

GBP 2.42

1

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ROHM N-Channel MOSFET, 500 mA, 30 V, 3-Pin SMT RJK005N03T146

ROHM N-Channel MOSFET, 9 A, 600 V, 3-Pin TO-220FM R6009JNXC7G

ROHM N-Channel MOSFET, 9 A, 650 V, 3-Pin D2PAK R6509KNJTL

ROHM N-Channel MOSFET, 1 A, 100 V, 3-Pin SOT-346T RQ5P010SNTL

ROHM N-Channel MOSFET, 9 A, 650 V, 3-Pin D2PAK R6509ENJTL

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