ROHM SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N SCT3040KLGC11
ROHM SiC N-Channel MOSFET, 55 A, 1200 V, 3-Pin TO-247N SCT3040KLGC11, Mounting Type: Through Hole, Maximum Drain Source Resistance: 60 mΩ, Channel Mode: Enhancement, Maximum Gate Threshold Voltage: 5.6V, Minimum Gate Threshold Voltage: 2.7V, Maximum Power Dissipation: 165 W, Transistor Configuration: Single, Maximum Gate Source Voltage: 22 V, Height: 21mm